A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs

Dominique Fleury (1, 2) , Antoine Cros (2) , Grégory Bidal (1, 2) , Hugues Brut (2) , Emmanuel Josse (2) , Gérard Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

In this study, a new technique to extract the S/D series resistance (Rsd) from the total resistance versus transconductance gain plot Rtot(1/beta) is proposed. The technique only requires the measurement of Id(Vgs)|Vgt and beta, allowing fast and statistical analysis in an industrial context. Unlike the usual Rtot(L)-based techniques, it has the advantage of being insensitive to the channel length and mobility variations and finally enables to extract very accurate values for Rsd(Vgs) and the effective mobility reduction factor mueff(Vgt)/mueff(0).

Mots clés: Series Resistance; MOSFET; extraction technique; low field moblity

Domaines: Micro et nanotechnologies/Microélectronique

Dominique Fleury, Antoine Cros, Grégory Bidal, Hugues Brut, Emmanuel Josse, et al.. A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs. International Symposium on VLSI Technology, Systems and Applications, Apr 2009, Hsinchu, Taiwan. pp.109 - 110, ⟨10.1109/VTSA.2009.5159314⟩. ⟨hal-00465769⟩