Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below

Dominique Fleury (1, 2) , Antoine Cros (2) , Krunoslav Romanjek (3, 4) , David Roy (2) , Franck Perrier (5) , Benjamin Dumont (2) , Hugues Brut (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]
3 NXP Semiconductors
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 SOFRADIR (Veurey-Voroize)

Constant downscaling of transistors leads to increase the relative difference between Lmask and Leff. Effective length (Leff) extractions are now crucial to avoid calculations errors on parameters such as the mobility, which can exceed 100% for shorter devices. We propose an industrially-adapted method to extract Leff by using an enhanced "split C-V" method. Accurate and consistent values have been extracted (plusmn1 nm) and then correlated to mobility and HCI lifetime studies, as a function of Leff.

Mots clés: extraction technoqie; measuerements; capacitance technique; Effective length

Domaines: Micro et nanotechnologies/Microélectronique

Dominique Fleury, Antoine Cros, Krunoslav Romanjek, David Roy, Franck Perrier, et al.. Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below. International Conference on Microelectronics Test Structures, Mar 2007, Tokyo, Japan. pp.89 - 92, ⟨10.1109/ICMTS.2007.374461⟩. ⟨hal-00465756⟩