Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2009

Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom

Résumé

The temperature behaviour in the range 22°C to 500 °C of the dielectric permittivity in the infrared range is investigated for CaF2, BaF2 and Al2O3 through reflectivity measurements. The dielectric permittivity is retrieved by fitting reflectivity spectra with a model taking into account multiphonon contributions. The results extrapolated from the measurements are applied to predict a temperature-dependent atom-surface van der Waals interaction. We specifically consider as the atom of interest Cs (8P3/2), the most relevant virtual couplings of which, fall in the range of thermal radiation and are located in the vicinity of the reststrahlen band of fluoride materials.
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Dates et versions

hal-00389083 , version 1 (28-05-2009)

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Thierry Passerat de Silans, Isabelle Maurin, Pedro Chaves de Souza Segundo, Solomon Saltiel, Marie-Pascale Gorza, et al.. Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom. Journal of Physics: Condensed Matter, 2009, 21, pp.255902. ⟨10.1088/0953-8984/21/25/255902⟩. ⟨hal-00389083⟩
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