A FULLY PARAMETERIZED FEM MODEL FOR ELECTROMAGNETIC OPTIMIZATION OF AN RF MEMS WAFER LEVEL PACKAGE

J. Iannacci (1, 2) , J. Tian (2) , R. Gaddi (1) , A. Gnudi (1) , M. Bartek (2)

1 ARCES - Advanced Research Center on Electronic Systems for Information and Communication Technologies E. De Castro [Bologna]
2 HiTeC-DIMES

In this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 ? transmission lines and shorts was fabricated and tested.

Mots clés: RF and optical

Domaines: Autre [cs.OH]; Architectures Matérielles [cs.AR]

J. Iannacci, J. Tian, R. Gaddi, A. Gnudi, M. Bartek. A FULLY PARAMETERIZED FEM MODEL FOR ELECTROMAGNETIC OPTIMIZATION OF AN RF MEMS WAFER LEVEL PACKAGE. DTIP 2007, Apr 2007, Stresa, lago Maggiore, Italy. pp.320-325. ⟨hal-00257710⟩