A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

P. Borthen (1) , G. Wachutka

1 Institute for Physics of Electrotechnology

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500°C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.

Mots clés: High-temperature electronics; high-temperature measurement; physical models

Domaines: Science des matériaux [cond-mat.mtrl-sci]

P. Borthen, G. Wachutka. A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization. THERMINIC 2007, Sep 2007, Budapest, Hungary. pp.189-194. ⟨hal-00202559⟩