DIFFERENTIAL TEMPERATURE SENSORS IN 0.35µm CMOS TECHNOLOGY

E. Aldrete-Vidrio (1) , D. Mateo (1) , J. Altet (1)

1 Electronic Engineering Department

Measurements of the thermal profile evolution obtained by built-in temperature sensors at the surface of an IC can be used to test and characterize digital and analog circuits, being a potential alternative when these circuits are embedded (e.g., in a SoC) and they present a critical observability of their electrical nodes. It has been proved elsewhere [3] that a differential sensing strategy is suitable for such temperature measurements. In this paper, two different differential temperature sensors, active and passive, designed and fabricated in a 0.35µm standard CMOS technology are presented and characterized. Active sensors are based on differential amplifiers using lateral parasitic bipolar transistors acting as transducer devices. Passive sensors are based on integrated thermopiles. Each consists of the series connection of 8 thermocouples (16 strips) but different materials : poly1-poly2 and poly1-P+ implant.

Mots clés: Vacuum sensor; temperature sensor; pn diode; microheater; thermistor; silicon

Domaines: Architectures Matérielles [cs.AR]

E. Aldrete-Vidrio, D. Mateo, J. Altet. DIFFERENTIAL TEMPERATURE SENSORS IN 0.35µm CMOS TECHNOLOGY. THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.122-128. ⟨hal-00189463⟩