Two-Dimensional Temperature Fields in ASICs for Multiple Heat Sources of Arbitrary Power Dissipation Derived from Conformal Mapping Theory
Résumé
The subject of this paper is the temperature distribution in ASICs generated by multiple rectangular stripe sources on the surface of the ASIC calculated with conformal mapping theory. All presented solutions are fully analytical, and contain geometrical and heat power parameters, only. The influence of these parameters and the temperature distribution strategies can therefore be examined directly and easily, as is e.g. necessary for placement optimization. The solutions are applied to two examples with multifinger structures. In the first, the sources consist of power DMOS transistors that exhibit thin and long fingers. The results are compared with equivalent ANSYS simulations, and show a very good agreement. In the other example used in high frequency applications, the source length is shorter, making an appropriate correction for the three-dimensional effects necessary. For both applications, the temperature distribution is shown for different layers on top and inside the chip.
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