HIGH QUALITY FACTOR COPPER INDUCTORS INTEGRATED IN DEEP DRY ETCHED QUARTZ SUBSTRATES

C. Leroy (1) , M. Pisani (1, 2) , C. Hibert (2) , D. Bouvet (1) , M. Puech (3) , A.M. Ionescu (1)

1 Electronics Laboratory (LEG)
2 Center of Micro and Nanotechnology (CMI)
3 Alcatel Vacuum Technology

This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) devices using quartz insulating substrates and thick high-conductivity copper lines. Inductors are key devices in RF circuits that, when fabricated on traditional semiconductor substrates, suffer from poor RF performances due to thin metallization and substrate related losses. Many previous works revealed that RF performances are strongly dependent on the limited metallization thickness and on the conductivity of the substrate. In this paper, we demonstrate a new fabrication process to improve the Q factor of spiral inductors by patterning thick metal layers directly in a dielectric substrate. Moreover, we develop and validate accurate equivalent circuit modeling and parameter extraction for the characterization of the fabricated devices.

Mots clés: High Q inductor; RF passive devices; dielectrics dry etching; Cu electroplating; lift-off proces

Domaines: Architectures Matérielles [cs.AR]

C. Leroy, M. Pisani, C. Hibert, D. Bouvet, M. Puech, et al.. HIGH QUALITY FACTOR COPPER INDUCTORS INTEGRATED IN DEEP DRY ETCHED QUARTZ SUBSTRATES. DTIP 2006, Apr 2006, Stresa, Lago Maggiore, Italy. 5 p. ⟨hal-00189280⟩