SiGe HBT Nonlinear Phase Noise Modeling
Résumé
A nonlinear noise model of a SiGe bipolar transistor is presented. This model includes nonlinear noise sources and is able to predict the noise conversion phenomena in circuits using this transistor and as the phse noise of an oscillator. It is based on two main low frequency noise sources, which are extracted thanks to noise measurements under large RF signal superposition. The model is compared to the experiment thanks to residual phase noise data at different RF power level.
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