SELF-ORGANIZATION OF A 2D LATTICE ON A SURFACE OF GE SINGLE CRYSTAL AFTER IRRADIATION WITH YAG: ND LASER - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2005

SELF-ORGANIZATION OF A 2D LATTICE ON A SURFACE OF GE SINGLE CRYSTAL AFTER IRRADIATION WITH YAG: ND LASER

A. Medvid
  • Fonction : Auteur
  • PersonId : 841981
P. Onufrievs
  • Fonction : Auteur
  • PersonId : 841982

Résumé

Experimentally observed self-organization of a 2D lattice on the surface of Ge single crystal after irradiation by pulsed YAG: Nd laser is repoted. The calculation of time depended distribution of temperature in bulk of the Ge sample show that overheating of the crystal lattice occurs at laser radiation intensities exceeding 30MW/cm2.The two temperature gradients are exists.
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Dates et versions

hal-00166981 , version 1 (14-08-2007)

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Citer

A. Medvid, A. Mychko, P. Onufrievs. SELF-ORGANIZATION OF A 2D LATTICE ON A SURFACE OF GE SINGLE CRYSTAL AFTER IRRADIATION WITH YAG: ND LASER. ENS 2005, Dec 2005, Paris, France. pp.33-36. ⟨hal-00166981⟩

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