Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

P. Hazdra (1) , J. Voves (1) , J. Oswald (2) , K. Kuldova (2) , A. Hospodkova (2) , E. Hulicius (2) , J. Pangrac (2)

1 Department of Microelectronics [Prague]
2 Institute of Physics [Prague]

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.

Mots clés: InAs; GaAs; quantum dots; photomodulated reflectance spectroscopy; photoluminescence; electronic states

Domaines: Science des matériaux [cond-mat.mtrl-sci]

P. Hazdra, J. Voves, J. Oswald, K. Kuldova, A. Hospodkova, et al.. Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots. ENS 2006, Dec 2006, Paris, France. pp.9-13. ⟨hal-00166756⟩