Micro-irradiation experiments in MOS transistors using synchrotron radiation

J. Autran (1) , P. Masson (1, 2) , N. Freud (3) , Christophe Raynaud (4, 5) , C. Riekel (6)

1 LPM - Laboratoire de physique de la matière
2 LPCS - Laboratoire de Physique des Composants à Semiconducteurs
3 CNDRI - Controle Non Destructif par Rayonnements Ionisants
4 AMPERE - Ampère
5 CEGELY - Centre de génie électrique de Lyon
6 ESRF - European Synchrotron Radiation Facility

Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements.

Mots clés: CHARGE-PUMPING TECHNIQUE; OXIDES; TRAPS

Domaines: Autre; Physique Nucléaire Expérimentale [nucl-ex]

J. Autran, P. Masson, N. Freud, Christophe Raynaud, C. Riekel. Micro-irradiation experiments in MOS transistors using synchrotron radiation. IEEE Transactions on Nuclear Science, 2000, 47 (3 Part 1), pp.574-579. ⟨hal-00141515⟩