NUMERICAL MODELING OF GATE TURN-OFF THYRISTOR USING SICOS

D. G. Ni (1) , Gérard Rojat (1) , Guy Clerc (1) , Jean-Pierre Chante (1)

1 CEGELY - Centre de génie électrique de Lyon

This paper presents a numerical model of gate turn-off thyristors (GTO's). The new concept of a controlled-switch realized by a controlled-current source is first introduced. Using this basic model, an equivalent circuit of the GTO is given. According to the characteristics of GTO given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced. All of the parameters of the equivalent circuit are determined. A sample study is presented at the end of the paper. We have simulated this numerical model with the SICOS program and the results are in concordance with the experiment.

Domaines: Energie électrique; Modélisation et simulation

D. G. Ni, Gérard Rojat, Guy Clerc, Jean-Pierre Chante. NUMERICAL MODELING OF GATE TURN-OFF THYRISTOR USING SICOS. IEEE Transactions on Industrial Electronics, 1993, 40 (3), pp.326-333. ⟨hal-00140576⟩