Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime

V.T. Renard (1, 2) , I.V. Gornyi (3, 4) , O.A. Tkachenko (1, 5) , V.A. Tkachenko (5) , Z.D. Kvon (5, 1) , E.B. Olshanetsky (1, 5) , A.I. Toropov (5) , J.-C. Portal (1, 2, 6)

1 LCMI-GHMFL - Laboratoire des champs magnétiques intenses
2 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
3 A.F. Ioffe Physical-Technical Institute
4 Institut fur Nanotechnologie, Forschungszentrum Karlsruhe
5 Institute of semiconductor Physics
6 IUF - Institut universitaire de France

We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both the longitudinal conductivity and the Hall effect. We perform a parameter free comparison of our experimental data for the longitudinal conductivity at zero magnetic field, the Hall coefficient, and the magnetoresistivity to the recent theories of interaction-induced corrections to the transport coefficients. A quantitative agreement between these theories and our experimental results has been found.

Mots clés: 2D electron systems; interaction

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

V.T. Renard, I.V. Gornyi, O.A. Tkachenko, V.A. Tkachenko, Z.D. Kvon, et al.. Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.075313. ⟨hal-00004940⟩