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Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration

Abstract : Nowadays, Microelectronics industry must handle a real “data deluge” and a growing demand of added functionalities due to the new market sector of Internet Of Things, 5G but also Artificial Intelligence... At the same time, energy becomes a major issue and new computation paradigms emerge to break the traditional Von-Neumann architecture. In this context, this PhD manuscript explores both 3D monolithic integration and nano-electronic devices for In-Memory Computing. First, 3D monolithic integration is not seen only as an alternative to Moore’s law historic scaling but also to leverage circuit diversification. The advantages of this integration are analysed in depth and in particular an original top-tier Static Random Access Memories (SRAM) assist is proposed, improving significantly SRAM stability and performances without area overhead. In a second time, an original transistor architecture, called junctionless, suitable for 3D-monolithic integration is studied in detail. Devices are simulated, fabricated and electrically characterised for mixed digital/analog applications. In particular, the impact of channel doping density on mismatch is tackled. Also, low temperature (<500°C) junctionless bricks are developed and device optimization trade-off are discussed. In a third time, an innovative 3D structure combining state of the art devices: junctionless stacked Silicon nanowires and Resistive Random Access Memories (RRAM) is envisioned. This technology is proved to enable In-Memory Boolean operations through a so-called “scouting logic” approach.
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https://tel.archives-ouvertes.fr/tel-03219902
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Submitted on : Thursday, May 6, 2021 - 6:03:10 PM
Last modification on : Friday, May 7, 2021 - 3:19:03 AM

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BOSCH_2020_archivage.pdf
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  • HAL Id : tel-03219902, version 1

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Daphnée Bosch. Simulation, fabrication and electrical characterization of advanced silicon MOS transistors for 3D-monolithic integration. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-..], 2020. English. ⟨NNT : 2020GRALT077⟩. ⟨tel-03219902⟩

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