Compendium for precise ac measurements of the quantized hall resistance, Metrologia, vol.46, p.1, 2009. ,
Hall potential proles in the quantum hall regime measured by a scanning force microscope, Physica B, vol.298, p.562, 2001. ,
Composite fermions and broken symmetries in graphene, Nat. Commun, 2014. ,
Phase space for the breakdown of the quantum hall eect in epitaxial graphene, Phys. Rev. Lett, vol.111, p.96601, 2013. ,
Giant quantum hall plateaus generated by charge transfer in epitaxial graphene, Sci. Rep, vol.6, p.30296, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01719503
Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper, Science advance, vol.1, 2015. ,
Unveiling quantum hall transport by efros-shklovskii to mott variable-range hopping transition in graphene, Phys. Rev. B, vol.86, p.85433, 2012. ,
Onevolt josephson arbitrary waveform synthesizer, IEEE Trans. Appl. Supercond, vol.25, p.1300108, 2015. ,
Calibration and Measurement Capabilities Electricity and Magnetism : DC Current. Key comparison database, 2016. ,
, BIPM. The International System of units (SI, 2006.
Absence of backscattering in the quantum hall eect in multiprobe conductors, Phys. Rev. B, vol.38, p.9375, 1988. ,
Transmission probabilities and the quantum hall eect, Phys. Rev. Lett, vol.62, p.229, 1989. ,
Generalized many-channel conductance formula with application to small rings, Phys. Rev. B, vol.31, p.6207, 1985. ,
Dissipation and dynamic nonlinear behavior in the quantum hall regime, Phys. Rev. Lett, vol.51, p.1374, 1983. ,
, Electron counting capacitance standard with an improved ve-junction R-pump. Metrologia, vol.49, p.814, 2012.
Mechanical characterization and cleaning of cvd singlelayer h-bn resonators, npj 2D Materials and Applications, vol.1, issue.16, 2017. ,
Ultrathin epitaxial graphite : 2d electron gas properties and a route toward graphene-based nanoelectronics, J. Phys. Chem. B, vol.108, 2004. ,
Corona discharge processes, IEEE Transaction on Plasma science, vol.19, 1991. ,
Heating of two-dimensional electrons by a high electric eld in a quantizing magnetic eld : Consequences in landau emission and in the quantum hall eect, Phys. Rev. B, vol.52, p.11178, 1995. ,
Diusive charge transport in graphene on sio2, Solid State Communications, vol.149, issue.27, pp.1080-1086, 2009. ,
Coulomb interactions and the integer quantum hall eect : Screening and transport, Phys. Rev. B, vol.48, p.45304544, 1993. ,
Métrologie et enseignement, 2003. ,
Series and parallel connection of multiterminal quantum halleect devices, J. Appl. Phys, vol.73, p.7914, 1993. ,
Revised technical guidelines for reliable dc measurements of the quantized hall resistance, Metrologia, vol.40, p.217, 2003. ,
Progress in resistance ratio measurements using a cryogenic current comparator at lcie, IEEE Trans. Instrum. Meas, vol.34, p.316, 1985. ,
Quantum metrological triangle experiment at LNE : measurements on a three-junction R-pump using a 20 000 :1 winding ratio cryogenic current comparator, Meas. Sci. Technol, vol.23, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-00789063
Séminaire Poincaré 2 :25 years of Quantum Hall Eect (QHE), p.17, 2004. ,
Ultrasatable lownoise current amplier : A novel device for measuring small electric currents with high accuracy, Rev. Sci. Instrum, vol.86, p.24703, 2015. ,
Validation of the ultrastable low-noise current amplier as travelling standard for small direct currents, Metrologia, vol.52, p.756, 2015. ,
Two dierent regimes of electron transport in a two-dimensional electron gas at high magnetic elds, Phys. Rev. B, vol.55, pp.7355-7358, 1997. ,
Theory of the fractional quantum hall eect : The two-phase model, Phys. Rev. B, vol.50, p.23692379, 1994. ,
Coulomb gap and low temperature conductivity of disordered systems, J. Phys. C, vol.8, pp.49-51, 1975. ,
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nat. Mater, vol.8, p.203, 2009. ,
Raman spectra of epitaxial graphene on sic(0001), Appl. Phys. Lett, vol.92, 2008. ,
Raman spectroscopy of epitaxial graphene on a sic substrate, Phys. Rev. B, vol.77, 2008. ,
, , 2017.
Anderson transitions, Reviews of Modern Physics, vol.80, p.1355, 2008. ,
Localization length at the resistivity minima of the quantum hall eect, Phys. Rev. B, vol.57, p.4614, 1998. ,
Self-referenced single-electron quantized current source, Phys. Rev. Lett, vol.112, p.226803, 2014. ,
Electronic transport and the localization length in the quantum hall eect, Phys. Rev. B, vol.57, p.14818, 1998. ,
Towards a quantum representation of the ampere using single electron pumps, Nat. Commun, vol.3, p.930, 2012. ,
Quantum resistance metrology in graphene ,
, Appl. Phys. Lett, vol.93, p.222109, 2009.
Scaling of the quantum hall plateau-plateau transition in graphene, Phys. Rev. B, vol.80, issue.241411, 2009. ,
Electronic properties of graphene in a strong magnetic eld, Rev. Mod. Phys, vol.83, p.1193, 2011. ,
Variable range hopping as the mechanism of the conductivity peak broadening in the quantum hall regime, Phys. Rev. Lett, vol.70, p.3796, 1993. ,
Activated conductivity in the quantum hall eect, Phys. Rev. Lett, vol.73, p.1150, 1994. ,
Quantum hall eect in exfoliated graphene aected by charged impurities : Metrological measurements, Phys. Rev. B, vol.85, p.165420, 2012. ,
On a new action of the magnet on electric currents, American Journal of Mathematics, vol.2, issue.3, p.1879 ,
Homogeneous optical and electronic properties of graphene due to the suppression of multilayer patches during cvd on copper foils, Adv. Funct. Mater, vol.24, p.964, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-00880874
Direct comparison of the quantized hall resistance in gallium arsenide and silicon, Phys. Rev. Lett, vol.66, p.969, 1991. ,
Electron-phonon interactions and the breakdown of the dissipationless quantum hall eect, Phys. Rev. B, vol.30, p.3016, 1984. ,
Tuning the transport properties of graphene lms grown by cvd on sic(0001) : Eect of in situ hydrogenation and annealing, Phys. Rev. B, vol.89, p.85422, 2014. ,
Introduction to the theory of the Integer Quantum Hall Eect, 1994. ,
Graphene, universality of the quantum hall eect and redenition of the si system, New J. Phys, vol.13, p.93026, 2011. ,
, Operation of graphene quantum hall resistance standard in a cryogen-free table-top system. 2D Materials, vol.2, p.35015, 2015.
Anomalously strong pinning of the lling factor ? = 2 in epitaxial graphene, Phys. Rev. B, vol.83, p.233402, 2011. ,
Precision comparison of the quantum hall eect in graphene and gallium arsenide, Metrologia, vol.49, p.294, 2012. ,
Material, device, and step independence of the quantized hall resistance, IEEE Trans. Instrum. Meas, vol.44, p.269, 1995. ,
High-precision measurements of the quantized hall resistance :experimental conditions for universality, Phys. Rev. B, vol.55, 1997. ,
The quantum hall eect as an electrical resistance standard, Rep. Prog. Phys, vol.64, p.1603, 2001. ,
Optimization of qhe-devices for metrological applications, IEEE TRans. Instrum. Meas, vol.50, p.218, 2001. ,
Hybrid metal-semiconductor electron pump for quantum metrology, Phys. Rev. X, vol.3, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02009836
Thermal agitation of electricity in conductors, Phys. Rev, vol.32, p.97109, 1928. ,
Possible new eects in superconductive tunnelling, Phys. Lett, vol.1, p.251, 1962. ,
Quantum hall eect in bottom-gated epitaxial graphene grown on the c-face of sic, Appl. Phys. Lett, vol.100, p.52102, 2012. ,
Non-adiabatic quantized charge pumping with tunable-barrier quantum dots : a review of current progress, Rep. Prog. Phys, vol.78, p.103901, 2015. ,
Universal decay cascade model for dynamic quantum dot initialization, Phys. Rev. Lett, vol.104, 2010. ,
A capacitance standard based on counting electrons, Science, vol.285, p.1706, 1999. ,
Uncertainty budget for the nist electron counting capacitance standard, eccs-1. Metrologia, vol.44, p.505, 2007. ,
, Coaxial AC Bridges. Adam Hilger Ltd, 1984.
Towards a 1 v josephson arbitrary waveform synthesizer, IEEE Trans. Appl. Supercond, vol.25, p.1400305, 2015. ,
Synthesis of monolayer hexagonal boron nitride on cu foil using chemical vapor deposition, Nano Letters, vol.12, issue.1, pp.161-166, 2012. ,
Global phase diagram in the quantum hall eect, Phys. Rev. B, vol.46, p.22232238, 1992. ,
New method for high-accuracy determination of the ne-structure constant based on quantized hall resistance, Phys. Rev. Lett, vol.45, p.494, 1980. ,
Charge transfer between epitaxial graphene and silicon carbide, Appl. Phys. Lett, vol.97, p.112109, 2010. ,
Highly precise comparison of Nb/Al/Alox/Al/AlOx/Al/Nb josephson junction arrays using a SQUID as a null detector, Phys. Rev. Lett, vol.15, 1034. ,
Comeback of epitaxial graphene for electronics : large-area growth of bilayer-free graphene on sic, 2016. ,
Quantum Hall eect in graphene for resistance metrology : Disorder and quantization, 2015. ,
Anomalous dissipation mechanism and hall quantization limit in polycrystalline graphene grown by chemical vapor deposition, Phys. Rev. B, vol.90, p.115422, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01369122
Quantum hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide, Nature Communications, vol.6, p.6806, 2015. ,
Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure, Adv. Mater, vol.23, p.878, 2011. ,
Tuning carrier density across dirac point in epitaxial graphene on sic by corona discharge, Appl. Phys. Lett, vol.105, 2014. ,
Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium, Science, vol.344, issue.286, 2014. ,
Top-and side-gated epitaxial graphene eld eect transistors, Physica status solidi (a), 2010. ,
Chiral tunnelling and the klein paradox in graphene, Nature Phys, vol.385, p.620625, 2006. ,
Observation of electron hole puddles in graphene using a scanning single electron transistor, Nature Physics, 2007. ,
A review of chemical vapor deposition of graphene on copper, Journal of Materials Chemistry, vol.10, 2011. ,
Eect of ac impedance on dc voltage-current characteristics of superconductor weak-link junctions, J. Appl. Phys, vol.39, p.3113, 1968. ,
Behavior of the contacts of quantum hall eect devices at high currents, J. Appl. Phys, vol.96, p.404, 2004. ,
Direct growth of few-layer graphene on 6h-sic and 3c-sic/si via propane chemical vapor deposition, Appl. Phys. Lett, vol.97, p.171909, 2010. ,
Eects of pressure, temperature, and hydrogen during graphene growth on sic(0001) using propane-hydrogen chemical vapor deposition, Journal of Applied Physics, vol.113, 2013. ,
Redenition of the kilogram, ampere, kelvin and mole : a proposed approach to implementing CIPM recommendation 1. Metrologia, vol.43, p.227246, 2006. ,
Modernizing the SI : towards an improved, accessible and enduring system, Metrologia, vol.44, p.356364, 2007. ,
Data and analysis for the codata 2017 special fundamental constants adjustment, Metrologia, vol.55, p.125146, 2018. ,
Transport and elastic scattering times as probes of the nature of impurity scattering in single-layer and bilayer graphene, Phys. Rev. Lett, vol.104, p.126801, 2010. ,
Conduction in non-crystalline materials, Philos. Mag, vol.26, p.1015, 1972. ,
Two-dimensional hopping conduction in a magnetic eld, Sov. Phys. Semicond, vol.18, p.207, 1984. ,
Epitaxial graphene on sic0001 : advances and perspectives, Phys.Chem.Chem.Phys, vol.16, issue.3501, 2014. ,
Two-dimensional gas of massless dirac fermions in graphene, Nature, vol.438, p.197, 2005. ,
Electric eld eect in atomically thin carbon lms, Science, vol.306, p.666, 2004. ,
DOI : 10.1126/science.1102896
Thermal agitation of electric charge in conductors, Phys. Rev, vol.32, p.110113, 1928. ,
DOI : 10.1103/physrev.32.110
Localization of electrons under strong magnetic elds in a twodimensional system, Journal of the Physical Society of Japan, vol.51, p.237243, 1982. ,
Universality in the crossover between edge-channel and bulk transport in the quantum hall regime, Phys. Rev. B, vol.58, p.1540115404, 1998. ,
High electron mobility in epitaxial graphene on 4h-sic(0001) via post-growth annealing under hydrogen, Sci. Rep, vol.4, p.4558, 2014. ,
DOI : 10.1038/srep04558
URL : https://www.nature.com/articles/srep04558.pdf
Current distribution and hall potential landscape towards breakdown of the quantum hall eect : a scanning force microscopy investigation, New J. Phys, vol.16, 2014. ,
Report on a joint bipm-euromet project for the fabrication of qhe samples by the lep, IEEE Trans. Instrum. Meas, vol.42, p.264, 1993. ,
Mécanique quantique : une révolution en métrologie électrique, 2017. ,
A programmable quantum current standard from the josephson and the quantum hall eects, J. Appl. Phys, vol.115, p.44509, 2014. ,
DOI : 10.1063/1.4863341
URL : http://arxiv.org/pdf/1310.3172
Resistance metrology based on the quantum hall eect, Eur. Phys. J. Spec. Top, vol.172, p.207, 2009. ,
DOI : 10.1140/epjst/e2009-01051-5
Universal prefactor of activated conductivity in the quantum hall eect, Phys. Rev. Lett, vol.74, p.150, 1995. ,
Universal singularities in the integral quantum hall eect, Phys. Rev. Lett, vol.61, p.1297, 1988. ,
DOI : 10.1103/physrevlett.61.1297
, News from the bipm. Metrologia, vol.26, p.69, 1989.
DOI : 10.1088/0026-1394/29/1/002
, News from the BIPM. Metrologia, vol.26, p.6974, 1989.
DOI : 10.1088/0026-1394/29/1/002
Quantum hall resistance standard in graphene devices under relaxed experimental conditions, Nature Nano, vol.10, pp.965-971, 2015. ,
DOI : 10.1038/nnano.2015.192
URL : https://hal.archives-ouvertes.fr/hal-01615243
Quantum hall eect devices as circuit elements, J. Phys. D, vol.21, p.483, 1988. ,
DOI : 10.1088/0022-3727/21/3/018
Quasi-freestanding epitaxial graphene on sic obtained by hydrogen intercalation, Phys. Rev. Lett, vol.103, p.246804, 2009. ,
DOI : 10.1103/physrevlett.103.246804
URL : http://arxiv.org/pdf/0911.1953
Structural and electronic properties of epitaxial graphene on sic(0001) : a review of growth, characterization, transfer doping and hydrogen intercalation, J. Phys. D : Appl. Phys, vol.43, p.374009, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00569700
Electronic transport in two-dimensional graphene, Rev. Mod. Phys, vol.83, p.407, 2011. ,
Quantum resistance standard accuracy close to the zero-dissipation state, J. Appl. Phys, vol.114, p.64508, 2013. ,
DOI : 10.1063/1.4815871
URL : http://arxiv.org/pdf/1301.5241
The ratio error of the overlapped-tube cryogenic current comparator, IEEE Trans. Instrum. Meas., IM, vol.39, p.689697, 1990. ,
Josephson currents in superconducting tunneling : the eect of microwaves and another observations, Phys. Rev. Lett, vol.11, p.8082, 1963. ,
Quantum hall eect on centimeter scale chemical vapor deposited graphene lms, Appl. Phys. Lett, vol.99, 2011. ,
Hopping conduction in semiconductors subjected to a strong electric eld, vol.6, 1973. ,
Two-dimensional variable-range hopping conductivity : Inuence of the electron-ectron interaction, Philosophical Magazine Part B, vol.81, issue.9, p.10931103, 2001. ,
Validation of a quantized-current source with 0.2 ppm uncertainty, Appl. Phys. Lett, vol.107, p.103501, 2015. ,
Carrier transport mechanism in graphene on sic(0001), Phys. Rev. B, vol.84, p.115458, 2011. ,
A determination of the planck constant using the lne kibble balance in air, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02265847
A new theorem in electrostatics with applications to calculable standards of capacitance, Nature, vol.177, p.888890, 1956. ,
Topological interpretations of quantum hall conductance, J. Math. Phys, vol.35, p.5362, 1994. ,
Towards a quantum resistance standard based on epitaxial graphene, Nature Nanotechnology, vol.5, p.186, 2010. ,
Mbe growth of ultra-low disorder 2deg with mobility exceeding 35.10 6 cm ? 2/v s ? 1, Journal of Crystal Growth, vol.311, p.16581661, 2009. ,
A geometric explanation of the temperature dependence of the quantised hall resistance, J. Phys. C : Solid State Physics, vol.21, p.171, 1988. ,
Bottom-gated epitaxial graphene, Nature materials, 2011. ,
Graphene based surface plasmon polariton modulator controlled by ferroelectric domains in lithium niobate. scientic reports, 2015. ,
Precision quantization of hall resistance in transferred graphene ,
, Appl. Phys. Lett, vol.100, p.164106, 2012.
Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 10 7, Appl. Phys. Lett, vol.109, p.13101, 2016. ,
Puddle-induced resistance oscillations in the breakdown of the graphene quantum hall eect, Phys. Rev. Lett, vol.117, p.237702, 2016. ,
Epitaxial graphene homogeneity and quantum hall eect in millimeter-scale devices, Carbon, vol.115, p.229236, 2017. ,
A review on mechanical exfoliation for scalable production of graphene, Journal of Materials Chemistry A, 2012. ,
The quantum Hall eect, 1998. ,
Experimental observation of the quantum hall eect and berry's phase in graphene, Nature, vol.438, p.201, 2005. ,