Développement d'un driver communicant pour MOSFET SiC

Abstract : The semiconductors used in power converters such as IGBT and MOSFET transistors are driven by an electronic circuit called “gate driver”. This circuit is an interface between the control command circuit and the power semiconductors. In the work done during this PhD, a driver dedicated to SiC MOSFET transistors has been developed. It is designed for components with a continuous drain current value of 300A and working under a drain-source voltage of 1200V. Beyond the development of a driver dedicated to SiC MOSFET transistors technology, a second aspect of the work presented in this PhD is about the implementation of communication functions within the power converters. Drivers are then essential elements of the communication network then constituted. A communication channel that suits the standards requirements relating to drivers and suits the requirements concerning the power electronics working environment has been designed. It is located between the primary side of the driver and each of its channels. Thus, the communication network in the power converter reaches the area where the DC bus voltage of 1200V is situated. The galvanic isolation necessary to the user’s safety is kept and the parasitic capacitance induced by the addition of this communication function remains lower than 2pF. The possible uses offered by this communication channel are discussed. Some trials done under high electric constraints (2kV / 125kV/μs) validate the functioning of the prototype of the communication channel that has been developed. Data transmissions reaching a speed of 500kbits/s and based on CAN protocol have been carried out.
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Submitted on : Tuesday, October 17, 2017 - 12:48:57 PM
Last modification on : Thursday, December 13, 2018 - 4:36:12 PM
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  • HAL Id : tel-01617987, version 1


Christophe Bouguet. Développement d'un driver communicant pour MOSFET SiC. Electronique. UNIVERSITE DE NANTES, 2017. Français. ⟨tel-01617987⟩



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