, Screened donor impurities in many-valley semiconductors with anisotropic massesElectronic properties of twodimensional systemsTransistors CMOS décananométriques à canaux contraints sur silicium massif ou sur SOIImpact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of <100> or <110> oriented FDSOI cMOSFETs for the 32nm NodeStrain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology nodeThin body silicon-oninsulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementBeneath-The-Channel Strain- Transfer-Structure (STS) and Embedded Source/Drain Stressors for Strain and Performance Enhancement of Nanoscale MOSFETsSolid State Physics, Références Bibiographiques Thèse de Doctorat Symposium on VLSI Technology50 nm Silicon-On- Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner", Symposium on VLSI Technology, pp.27234372047-2053, 1976.
, Electron effective mobility in strained-Si/Si1???xGex MOS devices using Monte Carlo simulation, Thèse de Doctorat, pp.1320-13297121, 2000.
DOI : 10.1016/j.sse.2005.06.013
URL : https://hal.archives-ouvertes.fr/hal-00012102
, Symmetry and Strain-induced Effects in SemiconductorsImproved tetrahedron method for Brillouin-zone integrationsEffect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculationsPiezoresistive characteristics of short-channel MOSFETs on (100) siliconEtudes théoriques par simulation Monte-Carlo 3D de la sensibilité aux irradiations des technologies CMOS/SOISimplified model for inelastic acoustic phonon scattering of holes in Si and GeFull-Band Monte Carlo Simulation of Nanoscale Strained-Silicon MOSFETsScaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive StressProperties of a 2D electron gas with lifted spectral degeneracyDrift velocity of electrons and holes and associated anisotropic effects in siliconPiezoresistivity effects in MOS- FET useful for pressure transducers, Thèse de Doctorat Bychkov and É. Rashba, pp.681-68316223063715, 1966.
, Energy-Band Structure of Germanium and Silicon: The kCarrier mobilities in silicon empirically related to doping and fieldElectron-phonon scattering and ballistic behavior in semiconducting carbon nanotubes, Proceedings of the IEEE, pp.530-5432192, 1966.
, Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistorsExperimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance techniqueNonlocal pseudopotential calculations for the electronic structure of eleven diamond and zincblende semiconductorsStress memorization technique (SMT) by selectively strained-nitride capping for sub- 65nm high-performance strained-Si device applicationStress Proximity Technique for Performance Improvement with Dual Stress Liner at 45nm Technology and Beyond, Symposium on VLSI Technology Symposium on VLSI TechnologyOn the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices, pp.637-643, 1976.
, Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresMulti-gate SOI MOSFETsMobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersUnexpected mobility degradation for very short devices: A new challenge for CMOS scalingCarrier mobilities and process stability of strained Si n-and p-MOSFETs on SiGe virtual substratesElectronic transport in mesoscopic systemsNanoscale device modeling: the Green's function method, High Performance High-k/Metal Gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant Proc. ESSDERC, pp.789-798, 1923.
, Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistorsEtudes théoriques de structures pour l'électronique rapide et contribution au développement d'un simulateur particulaire Monte CarloMonte Carlo simulation of Hall and magnetoresistance mobility in SOI devicesA theoretical interpretation of magnetoresistance mobility in silicon inversion layersCyclotron Resonance in Ge-Si AlloysCyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsCarrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films, Modeling and simulating quantum electronic transport in semiconductor nanometer devices Thèse de Doctorat Habilitation à Diriger les RecherchesHole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4, pp.73709-61216, 1955.
, Low-Field Mobility in Strained Silicon with Full Band Monte Carlo Simulation using k.p and EPM BandstructureQuantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devicesQuo Vadis Nanoelectronics?Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scatteringA full-band Monte Carlo model for the temperature dependence of electron and hole transport in siliconMonte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects, IEEE Transactions on Electron Devices Proc. SISPAD, pp.291-2962185, 1988.
, On the enhanced electron mobility in strained-silicon inversion layersSix-band k.p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thicknessÉnergie et fonction d'onde des semi-conducterus", Éditions de Physique, Les UlisSemi-conducteurs : Les bases de la théorie k.p", à paraîtreElimination of spurious solutions from eight-band k.p theoryA new backscattering model giving a description of the quasi-ballistic transport in Nano- MOSFETEtude du transistor bipolaire à double hétérojonction Si/SiGe/Si par simulation Monte CarloBand offset predictions for strained group IV alloys: Si 1-x-y Ge x Cy on Si (001) and Si 1-x Ge x on Si 1-z Ge z (001)Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) siliconLow temperature (800°C) recessed junction selective silicon-germanium source/drain technology for sub-70 nm CMOSA 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistorsCoupled Mechanical and 3- D Monte Carlo Simulation of Silicon Nanowire MOSFETsNew method for the extraction of MOSFET parameters, Thèse de DoctoratEngineering strained silicon on insulator wafers with the Smart Cut TM technology Solid- State Electronics, pp.1058-10877320, 1988.
, 1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor IntegrationsInfluence des contraintes mécaniques nonintentionnelles sur les performances des transistors MOS à canaux ultra-courtsCalculations of hole mass in [110]- uniaxially strained silicon for the stress-engineering of p-MOS transistorsSilicon CMOS devices beyond scalingFirst-order parameter extraction on enhancement silicon MOS transistorsHighly performant double gate MOSFET realized with SON processNew Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas Problem, Symposium on VLSI Technology Thèse de Doctorat, INPG, Grenoble IEE Proceedings. Part I. Solid-state and electron devicesInfluence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films, pp.16504701-708339, 1965.
, Influence of non-linear effects on very short pMOSFET device performancesHeterogeneous Integration of Enhancement Mode In0.7Ga0.3As Quantum Well Transistor on Silicon Substrate using Thin (< 2 µm) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic ApplicationsMonte Carlo Study of Apparent Mobility Reduction in Nano-MOSFETsExperimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETsFull band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETsMonte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistorsIn-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor designInternational Technology Roadmap for Semiconductors (ITRS)The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsThe Monte Carlo method for semiconductor device simulationApproche du potentiel effectif pour la simulation Monte-Carlo du transport électronique avec effets de quantification dans les dispositifs MOSFETsQuantum-corrected Monte-Carlo simulation of double-Gate nMOSFETEfficient full-band Monte Carlo simulation of silicon devicesHierarchical device Simulation: The Monte Carlo perspectiveAn Application Driven Improvement of the Drift Diffusion Model for Carrier Transport in Decanano-Scaled CMOS DevicesBand structure of indium antimonideIntroduction to solid state physicsIonized-impurity scattering of majority electrons in silicon, Methods for anisotropic selection of final states in the full band ensemble Monte Carlo simulation framework Simulation Practice and Theory MOS devices Proc. ESSDERC, Munich Proc. ESSDERC Thèse de DoctoratEfficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations Solid-State Electronics, pp.321-3322893, 1957.
, A method to reduce small-angle scattering in Monte Carlo device analysis, IEEE Transactions on Electron Devices, vol.46, issue.6, pp.1196-1200, 1999.
DOI : 10.1109/16.766884
, Gate Fabricated in a Si Process Line on 200mm GeOI WafersA Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm NodeSub-5nm All-Around Gate FinFET for Ultimate ScalingHole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si 1-x Ge xElectron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single-and dual-channel SiGe heterostructuresStrained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor fieldeffect transistorsOn the Numerical Calculation of the Density of States and Related PropertiesHole mobility enhancements in strained Si/Si 1-y Ge y p-type metal-oxidesemiconductor field-effect transistors grown on relaxed Si 1-x Ge x (x<y) virtual substratesHole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor fieldeffect transistorsChemically Derived, Science and Technology Symposium on VLSI Technology Symposium on VLSI TechnologyLiu2006] P. Liu, J. Pan, T. Chang et al., "Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface", Symposium on VLSI TechnologyStrained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy", Symposium on VLSI Technology, pp.3812590-25961550, 1972.
, A physically based mobility model for numerical simulation of nonplanar devices, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.7, issue.11, pp.1164-1171, 1988.
DOI : 10.1109/43.9186
, Essential physics of carrier transport in nanoscale MOSFETs, IEEE Transactions on Electron Devices, vol.49, issue.1, pp.133-141, 2002.
DOI : 10.1109/16.974760
, Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistorsQuasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysisModeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and borondoped siliconNonlinear piezoresistance effects in siliconA simple parameter extraction method for ultra-thin oxide MOSFETsMagnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistorsSub-micron, metal gate, high-k dielectric, implant-free, enhancement-mode III-V mosfetsBallistic metal-oxide-semiconductor field effect transistorMulti-subband effects on performance limit of nanoscale MOSFETsHigh-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si, Landauer Approach to Nanoscale MOSFETs Proc. ESSDERCFull band Monte Carlo simulation of electron transport in 6H-SiC, pp.481-489114511, 1983.
, Hole drift velocity in siliconUnderstanding quasiballistic transport in nano-MOSFETs: Part I -Scattering in the channel, and in the drainIterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradientsPhysics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on- InsulatorFully quantum selfconsistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approachA Study of Quantum Transport in End-of-Roadmap DG-MOSFETs Using a Fully Self- Consistent Wigner Monte Carlo ApproachSuppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorderDrift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors, Scalable eSiGe S/D Technology with Less Layout Dependence for 45-nm Generation", Symposium on VLSI TechnologyOn the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET SimulationEnergy-band structure of Ge, Si, and GaAs: A thirty-band k.p methodModélisation physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiques Thèse de DoctoratBand diagrams of Si and Ge quantum wells via the 30-band k.p methodStrained Si, Ge, and Si 1-x Ge x alloys modeled with a first-principles-optimized full-zone k.p method, pp.3318-33292727, 1975.
, p model in fully depleted SOI MOSFETs Solid State Electronics, to be publishedRapport InterneLow field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETsFabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETsStrained Si CMOS (SS CMOS) technology: opportunities and challengesImproved split C-V method for effective mobility extraction in sub-0, Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D- Electron Gas with Quantum Corrections Proc. ESSDERC, pp.1133-1139583, 2002.
, Influence of ballistic effects in ultra-small MOSFETs, Electrical Performance of Electronic Packaging IWCE-04, pp.207-210, 2004.
DOI : 10.1109/IWCE.2004.1407304
, On the Ballistic Transport in Nanometer-Scaled DG MOSFETs, IEEE Transactions on Electron Devices, vol.51, issue.7, pp.1148-1155, 2004.
DOI : 10.1109/TED.2004.829904
, Etude par simulation Monte Carlo d'architectures de MOSFET ultracourts à grille multiple sur SOI, Thèse de Doctorat, 2005.
URL : https://hal.archives-ouvertes.fr/tel-00011335
, NMOS drive current reduction caused by transistor layout and trench isolation induced stressThéorie du blocage de Coulomb appliquée aux nanostructures semi conductrices : modélisation des dispositifs à nanocristaux de siliciumDual stress liner enhancement in hybrid orientation technologyHole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGex PMOSFETsA Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diodeLocal mechanical-stress control (LMC): a new technique for CMOS-performance enhancementLow ballistic mobility in submicron HEMTsPiezoresistance Effect in Germanium and SiliconExploring the limits of stressenhanced hole mobilitySilicide induced pattern density and orientation dependent transconductance in MOS transistorsRole of Si 1 -x Ge x buffer layer on mobility enhancement in a strained-Si n-channel metaloxide-semiconductor field-effect transistorPerformance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanicalpolished SiGe substrateHole mobility in silicon inversion layers: Stress and surface orientationPhysics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistorsPiezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ( ~1.5 GPa) Channel StressComparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETsRole of scattering in nanotransistorsOn the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationOn the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation, Comparison of multiplegate MOSFET architectures using Monte Carlo simulation, pp.94-101537, 1954.
, On the Screening of Impurity Potential by Conduction ElectronsAnalysis of nano-scale MOSFET including uniaxial and biaxial strainA new`shiftnew`shift and ratio' method for MOSFET channel-length extractionRelationship Between Hole Mobility and Current Drive Enhancement in Uniaxially Strained Thin-Body SiGe-on-Insulator pMOSFETs", Symposium on VLSI TechnologyStrain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super- Critically Thick Strained Silicon Directly on Insulator (SC-SSOI), Symposium on VLSI TechnologyInfluence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETsA 90-nm logic technology featuring strained-siliconFuture of Strained Si/Semiconductors in Nanoscale MOSFETsUniaxialprocess-induced strained-Si: extending the CMOS roadmapThe Effect of General Strain on the Band Structure and Electron Mobility of SiliconIntegration of a long pulse laser thermal process for ultra shallow junction formation of CMOS devicesSimulating quantum transport in nanoscale transistors: Real versus mode-space approachesA simple quantum mechanical treatment of scattering in nanoscale transistors, 12 th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP), pp.1142-115849, 1959.
, Physics of Hole Transport in Strained Silicon MOSFET Inversion LayersNovel Channel-Stress Enhancement Technology with eSiGe S/D and Recessed Channel on Damascene Gate ProcessNMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structuresStrain dependence of the performance enhancement in strained-Si n-MOSFETsExperimental Comparison Between Sub-0.1-µm Ultrathin SOI Single-and Double-Gate MOSFETs: Performance and MobilityOn the Quantum Correction For Thermodynamic EquilibriumA quantum correction based on Schrodinger equation applied to Monte Carlo device simulationStress dependence and poly-pitch scaling characteristics of (110) PMOS drive currentDual stress liner for high performance sub-45nm gate length SOI CMOS manufacturingHybrid-orientation technology (HOT): opportunities and challengesRecord-high performance 32 nm node pMOSFET with advanced Two-step recessed SiGe-S/D and stress liner technologyEnhanced performance in sub- 100 nm CMOSFETs using strained epitaxial silicon-germaniumFundamentals of semiconductors, Symposium on VLSI Technology Symposium on VLSI TechnologyIntegration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates", Symposium on VLSI TechnologyOn the Apparent Mobility in Nanometric n-MOSFETs, pp.18211840-1851643, 1932.