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Study of electronic properties of nanostructures by ultrahigh vacuum atomic force microscopy

Abstract : We study the electronic properties of nanostructures using atomic force microscopy in ultra-high vacuum environment. The first part of this work consists in the characterization of silicon nanowires grown by metal-catalyzed chemical vapour deposition on silicon substrates, using conducting atomic force microscopy. The electrical transport at room and low-temperature through individual nanowires has been measured as a function of the position along tilted nanowires. It is shown that the conduction properties of as-grown intrinsic silicon nanowires are dominated by the presence of gold catalyst residues along their surface, which can be either partially suppressed (e.g. by a de-oxidation step), or enhanced upon heat treatment. The second part of this work consists in studying the charge transfer and ionization properties of hydrogen-passivated phosphorus-doped and boron-doped silicon nanocrystals grown by plasma enhanced chemical vapor deposition on silicon substrates, using ultra high vacuum amplitude modulation Kelvin force microscopy. It is demonstrated that the charge transfer from silicon nanocrystals follows an energy compensation mechanism, which is enhanced by quantum confinement. The results provide a measurement of the nanocrystal conduction band-gap opening due to quantum confinement in the 2-50 nm range, in agreement with parametrized tight-binding calculations. They also put forward the possibility to use doped nanocrystals as electron sources to achieve a controlled remote doping of nanostructures and devices with typical two-dimensional charge densities in the range of 2×10^11-10^14 cm^-2, or linear charge densities in the range of 8×10^5-2×10^7 cm^-1.
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Contributor : Lukasz Borowik Connect in order to contact the contributor
Submitted on : Wednesday, March 24, 2010 - 2:20:32 PM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM
Long-term archiving on: : Monday, June 28, 2010 - 4:36:05 PM


  • HAL Id : tel-00466670, version 1


Łukasz Borowik. Study of electronic properties of nanostructures by ultrahigh vacuum atomic force microscopy. Physics [physics]. Université des Sciences et Technologie de Lille - Lille I, 2009. English. ⟨tel-00466670⟩



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