Gate-Defined Quantum Dots in Intrinsic Silicon, Nano Letters, vol.7, issue.7, p.2051, 2007. ,
DOI : 10.1021/nl070949k
A silicon radio-frequency single electron transistor, Applied Physics Letters, vol.92, issue.11, p.112103, 2008. ,
DOI : 10.1063/1.2831664
Solid state physics, 1976. ,
Theory of single-electron charging of quantum wells and dots, Physical Review B, vol.44, issue.12, pp.6199-6211, 1991. ,
DOI : 10.1103/PhysRevB.44.6199
Single electronics: A correlated transfer of single electrons and cooper pairs in systems of small tunnel junctions. Mesoscopic phenomena in solids, 1991. ,
Tunnelling from a Many-Particle Point of View, Physical Review Letters, vol.6, issue.2, pp.57-59, 1961. ,
DOI : 10.1103/PhysRevLett.6.57
Deformation Potentials and Mobilities in Non-Polar Crystals, Physical Review, vol.80, issue.1, pp.72-80, 1950. ,
DOI : 10.1103/PhysRev.80.72
Reduced electron-phonon relaxation rates in quantum-box systems: Theoretical analysis, Physical Review B, vol.51, issue.19, pp.13281-13293, 1995. ,
DOI : 10.1103/PhysRevB.51.13281
Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases, Physical Review B, vol.42, issue.14, pp.8947-8951, 1990. ,
DOI : 10.1103/PhysRevB.42.8947
Dynamical Theory of Crystal Lattices, American Journal of Physics, vol.23, issue.7, 1954. ,
DOI : 10.1119/1.1934059
Lattice Vibrations in Silicon and Germanium, Physical Review Letters, vol.2, issue.6, pp.256-258, 1959. ,
DOI : 10.1103/PhysRevLett.2.256
Phonons: Theory and Experiments I, 1982. ,
Many-Body Quantum Theory in Condensed Matter Physics: An Introduction, 2004. ,
Coherent and sequential tunneling in series barriers, IBM Journal of Research and Development, vol.32, issue.1, pp.63-75, 1988. ,
DOI : 10.1147/rd.321.0063
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors, Solid State Communications, vol.58, issue.10, pp.739-741, 1986. ,
DOI : 10.1016/0038-1098(86)90513-2
Des propriétés de transport des nanotubes de carbone au transistor : étude par simulation Monte-Carlo, 2008. ,
Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Physical Review B, vol.14, issue.2, pp.556-582, 1976. ,
DOI : 10.1103/PhysRevB.14.556
Calculations on the size effects of Raman intensities of silicon quantum dots, Physical Review B, vol.65, issue.20, p.205305, 2002. ,
DOI : 10.1103/PhysRevB.65.205305
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor, Applied Physics Letters, vol.73, issue.21, p.3129, 1998. ,
DOI : 10.1063/1.122695
Double-dot-like charge transport through a small size silicon single electron transistor, Physica E: Low-dimensional Systems and Nanostructures, pp.2-4, 2002. ,
DOI : 10.1016/S1386-9477(02)00241-2
Application of single electron tunneling: Precision capacitance ratio measurements, Applied Physics Letters, vol.66, issue.19, p.2588, 1995. ,
DOI : 10.1063/1.113510
Theory of the Lattice Vibrations of Germanium, Physical Review Letters, vol.2, issue.12, pp.495-497, 1959. ,
DOI : 10.1103/PhysRevLett.2.495
Theory of the Lattice Vibrations of Germanium, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.253, issue.1273, pp.260-276, 1273. ,
DOI : 10.1098/rspa.1959.0192
Lattice vibrations, Reports on Progress in Physics, vol.26, issue.1, pp.1-45, 1963. ,
DOI : 10.1088/0034-4885/26/1/301
Lattice dynamics of ionic and covalent crystals, C R C Critical Reviews in Solid State Sciences, vol.310, issue.1, pp.1-44, 1971. ,
DOI : 10.1080/10408437108243425
Mécanique quantique, 1973. ,
Electronic Transport in Mesoscopic Systems, 1997. ,
How far will silicon nanocrystals push the scaling limits of NVMs technologies?, 2003. ,
Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond, The European Physical Journal Applied Physics, vol.36, issue.3, pp.197-214, 2006. ,
DOI : 10.1051/epjap:2006158
Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory, Solid-State Electronics, vol.47, issue.10, pp.1641-1644, 2003. ,
DOI : 10.1016/S0038-1101(03)00171-0
A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals, Microelectronic Engineering, vol.72, issue.1-4, pp.1-4, 2004. ,
DOI : 10.1016/j.mee.2004.01.027
URL : https://hal.archives-ouvertes.fr/hal-00485182
Theory of the Dielectric Constants of Alkali Halide Crystals, Physical Review, vol.112, issue.1, pp.90-103, 1958. ,
DOI : 10.1103/PhysRev.112.90
Physique Statistique, 1989. ,
Si/Si1???xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation, Journal of Applied Physics, vol.82, issue.8, p.3911, 1997. ,
DOI : 10.1063/1.365696
Etudes théoriques de structures pour l'électronique rapide et contribution au développement d'un simulateur particulaire Monte Carlo, 1999. ,
Inelastic Scattering of Neutrons in Solids and Liquids, 1963. ,
Single-shot read-out of an individual electron spin in a quantum dot Arxiv preprint cond-mat, 2004. ,
Si/SiO_2 core shell clusters probed by Raman spectroscopy, 2005. ,
Modified Raman confinement model for Si nanocrystals, Physical Review B, vol.73, issue.3, p.33307, 2006. ,
DOI : 10.1103/PhysRevB.73.033307
Einselection in Action: Decoherence and Pointer States in Open Quantum Dots, Physical Review Letters, vol.93, issue.2, p.26803, 2004. ,
DOI : 10.1103/PhysRevLett.93.026803
Transport in Nanostructures, 1997. ,
Phonons in GaP quantum dots, Physical Review B, vol.59, issue.4, pp.2881-2887, 1999. ,
DOI : 10.1103/PhysRevB.59.2881
Raman scattering from acoustic phonons confined in Si nanocrystals, Physical Review B, vol.54, issue.12, pp.8373-8376, 1996. ,
DOI : 10.1103/PhysRevB.54.R8373
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters, vol.88, issue.5, p.53121, 2006. ,
DOI : 10.1063/1.2168496
Beyond CMOS: quantum devices, Microelectronic Engineering, vol.39, issue.1-4, pp.263-272, 1997. ,
DOI : 10.1016/S0167-9317(97)00181-0
Charge-Qubit Operation of an Isolated Double Quantum Dot, Physical Review Letters, vol.95, issue.9, p.90502, 2005. ,
DOI : 10.1103/PhysRevLett.95.090502
Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals, Physical Review, vol.104, issue.5, pp.1281-1290, 1956. ,
DOI : 10.1103/PhysRev.104.1281
Quantum Kinetics in Transport and Optics of Semiconductors, 1996. ,
Carbon Nanotubes as Schottky Barrier Transistors, Physical Review Letters, vol.89, issue.10, p.106801, 2002. ,
DOI : 10.1103/PhysRevLett.89.106801
The lattice dynamics of rectangular silicon nanowires, physica status solidi (c), vol.9, issue.11, pp.2617-2620, 2004. ,
DOI : 10.1002/pssc.200405389
Lattice dynamics of ultrasmall silicon nanostructures, Applied Physics Letters, vol.87, issue.23, p.231906, 2005. ,
DOI : 10.1063/1.2138790
Lattice dynamics of silicon nanostructures, Nanotechnology, vol.17, issue.13, pp.3288-3298, 2006. ,
DOI : 10.1088/0957-4484/17/13/035
Lattice vibrational spectrum of germanium, Journal of Physics and Chemistry of Solids, vol.8, pp.405-418, 1959. ,
DOI : 10.1016/0022-3697(59)90376-2
InAs nanocrystals on SiO2???Si by molecular beam epitaxy for memory applications, Applied Physics Letters, vol.91, issue.13, 2007. ,
DOI : 10.1063/1.2793694
Quantum-dot thermometry, Applied Physics Letters, vol.91, issue.25, p.252114, 2007. ,
DOI : 10.1063/1.2826268
URL : http://arxiv.org/abs/0710.1250
Simple and controlled single electron transistor based on doping modulation in silicon nanowires, Applied Physics Letters, vol.89, issue.14, p.143504, 2006. ,
DOI : 10.1063/1.2358812
Reconstruction of phonon dispersion in Si nanocrystals, Journal of Physics: Condensed Matter, vol.14, issue.41, pp.671-677, 2002. ,
DOI : 10.1088/0953-8984/14/41/101
Numerical study of turnstile operation in random-multidot-channel field-effect transistor, Journal of Applied Physics, vol.99, issue.7, p.73705, 2006. ,
DOI : 10.1063/1.2189214
Electron relaxation in a quantum dot: Significance of multiphonon processes, Physical Review B, vol.46, issue.11, pp.7260-7263, 1992. ,
DOI : 10.1103/PhysRevB.46.7260
Electron-phonon interaction and the so-called phonon bottleneck effect in semiconductor quantum dots, Physica B: Condensed Matter, vol.227, issue.1-4, pp.1-4, 1996. ,
DOI : 10.1016/0921-4526(96)00445-0
Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots, Physical Review B, vol.56, issue.8, pp.4355-4358, 1997. ,
DOI : 10.1103/PhysRevB.56.R4355
High Performance N- Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts Arxiv preprint cond-mat, 2004. ,
Radiative and non-radiative inter-subband transition in self assembled quantum dots, Physica E: Low-dimensional Systems and Nanostructures, pp.1-4, 1998. ,
DOI : 10.1016/S1386-9477(98)00147-7
A Bond Charge Model of Lattice Dynamics. I, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.339, issue.1616, pp.73-83, 1616. ,
DOI : 10.1098/rspa.1974.0109
A Bond Charge Model of Lattice Dynamics. II, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.339, issue.1616, pp.85-96, 1616. ,
DOI : 10.1098/rspa.1974.0110
Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon, Applied Physics Letters, vol.89, issue.7, p.73106, 2006. ,
DOI : 10.1063/1.2337273
Quantum Statistical Mechanics, 1994. ,
Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure, Physical Review, vol.145, issue.2, pp.637-645, 1966. ,
DOI : 10.1103/PhysRev.145.637
Theory of the Vibrations of the Sodium Chloride Lattice, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.238, issue.798, pp.513-548, 1940. ,
DOI : 10.1098/rsta.1940.0005
Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints, Physical Review B, vol.74, issue.3, p.35316, 2006. ,
DOI : 10.1103/PhysRevB.74.035316
Inclusion of collision broadening in semiconductor electron-transport simulations, Physical Review B, vol.36, issue.12, pp.6547-6550, 1987. ,
DOI : 10.1103/PhysRevB.36.6547
Introduction to solid state physics, 1986. ,
Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals, Japanese Journal of Applied Physics, vol.47, issue.1, pp.130-132, 2008. ,
Electron self-energy in quantum dots, Physical Review B, vol.57, issue.4, pp.2061-2064, 1998. ,
DOI : 10.1103/PhysRevB.57.R2061
Inelastic-neutron-scattering study of phonon eigenvectors and frequencies in Si, Physical Review B, vol.50, issue.18, pp.13347-13354, 1994. ,
DOI : 10.1103/PhysRevB.50.13347
Les nanosciences: nanotechnologies et nanophysique, 2004. ,
Functional Relationship in Science and Technology, 1982. ,
A Graphene Field-Effect Device, IEEE Electron Device Letters, vol.28, issue.4, pp.282-281, 2007. ,
DOI : 10.1109/LED.2007.891668
Modélisation et simulation des effets mono-électroniques dans les nanodispositifs : application aux mémoires à peu d'électrons et à la logiques à bate de SET (Single-Electron Transistor), 2003. ,
Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films, Journal of Applied Physics, vol.88, issue.3, p.1439, 2000. ,
DOI : 10.1063/1.373836
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors, Science, vol.319, issue.5867, p.1229, 2008. ,
DOI : 10.1126/science.1150878
Correlated discrete transfer of single electrons in ultrasmall tunnel junctions, IBM Journal of Research and Development, vol.32, issue.1, pp.144-158, 1988. ,
DOI : 10.1147/rd.321.0144
Layered tunnel barriers for nonvolatile memory devices, Applied Physics Letters, vol.73, issue.15, p.2137, 1998. ,
DOI : 10.1063/1.122402
Single-electron devices and their applications, Proceedings of the IEEE, vol.87, issue.4, pp.606-632, 1999. ,
DOI : 10.1109/5.752518
Quantum transport equation for electric and magnetic fields, Physics Reports, vol.145, issue.5, pp.251-318, 1987. ,
DOI : 10.1016/0370-1573(87)90004-4
Many-particle Physics, 2000. ,
Theory of Lattice Dynamics in the Harmonic Approximation Academic press, 1971. ,
Lattice Vibrations in Silicon: Microscopic Dielectric Model, Physical Review Letters, vol.21, issue.8, pp.536-539, 1968. ,
DOI : 10.1103/PhysRevLett.21.536
A simple bond charge model for vibrations in covalent crystals, Chemical Physics Letters, vol.2, issue.4, pp.268-270, 1968. ,
DOI : 10.1016/0009-2614(68)85021-3
Dielectric Screening Model for Lattice Vibrations of Diamond-Structure Crystals, Physical Review, vol.186, issue.3, pp.871-884, 1969. ,
DOI : 10.1103/PhysRev.186.871
Elastic Properties of ZnS Structure Semiconductors, Physical Review B, vol.1, issue.10, pp.4005-4011, 1970. ,
DOI : 10.1103/PhysRevB.1.4005
The use of valence force potentials in calculating crystal vibrations, Journal of Physics and Chemistry of Solids, vol.28, issue.12, pp.2359-2368, 1967. ,
DOI : 10.1016/0022-3697(67)90021-2
Computing Division Using Single-Electron Tunneling Technology, IEEE Transactions On Nanotechnology, vol.6, issue.4, p.451, 2007. ,
DOI : 10.1109/TNANO.2007.901378
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.81.8721
Impact of few electron phenomena on floating-gate memory reliability, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004. ,
DOI : 10.1109/IEDM.2004.1419320
Degradation of floating-gate memory reliability by few electron phenomena, IEEE Transactions on Electron Devices, vol.53, issue.10, pp.2610-2619, 2006. ,
DOI : 10.1109/TED.2006.882284
URL : https://hal.archives-ouvertes.fr/hal-00145515
Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions, Applied Physics Letters, vol.81, issue.4, p.733, 2002. ,
DOI : 10.1063/1.1492318
Harmonic lattice dynamics of germanium, Physical Review B, vol.10, issue.10, pp.4331-4339, 1974. ,
DOI : 10.1103/PhysRevB.10.4331
Study of the Homology between Silicon and Germanium by Thermal-Neutron Spectrometry, Physical Review B, vol.6, issue.10, pp.3777-3786, 1972. ,
DOI : 10.1103/PhysRevB.6.3777
chalcopyrite semiconductors, Physical Review B, vol.10, issue.6, pp.2490-2494, 1974. ,
DOI : 10.1103/PhysRevB.10.2490
URL : https://hal.archives-ouvertes.fr/jpa-00216275
Lattice Dynamics of Wurtzite: CdS, Physical Review, vol.156, issue.3, pp.925-938, 1967. ,
DOI : 10.1103/PhysRev.156.925
Nonvolatile Si quantum memory with self-aligned doubly-stacked dots, IEEE Transactions on Electron Devices, vol.49, issue.8, pp.1392-1398, 2002. ,
DOI : 10.1109/TED.2002.801296
Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands, Journal of Applied Physics, vol.98, issue.12, p.124503, 2005. ,
DOI : 10.1063/1.2143116
Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals, Journal of Applied Physics, vol.86, issue.4, 1921. ,
DOI : 10.1063/1.370988
Etude prospective sur les dispositifs silicium à blocage de Coulomb dans une perspective d'application à la micro-électronique, 2003. ,
Raman Scattering by Silicon and Germanium, Physical Review, vol.155, issue.3, pp.712-714, 1967. ,
DOI : 10.1103/PhysRev.155.712
Hybrid single-electron transistor as a source of quantized electric current, Nature Physics, vol.4, issue.2, p.120, 2008. ,
DOI : 10.1063/1.368474
Silicon single-electron transistor fabricated by anisotropic etch and oxidation, Microelectronic Engineering, vol.83, issue.4-9, pp.4-9, 2006. ,
DOI : 10.1016/j.mee.2006.01.144
Covalent Bond in Crystals. I. Elements of a Structural Theory, Physical Review, vol.166, issue.3, pp.832-838, 1968. ,
DOI : 10.1103/PhysRev.166.832
Microscopic Theory of Force Constants in the Adiabatic Approximation, Physical Review B, vol.1, issue.2, pp.910-920, 1970. ,
DOI : 10.1103/PhysRevB.1.910
Lattice Dynamics of Grey Tin and Indium Antimonide, Physical Review B, vol.3, issue.4, pp.1268-1279, 1971. ,
DOI : 10.1103/PhysRevB.3.1268
Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices, Physical Review B, vol.78, issue.16, 2008. ,
DOI : 10.1103/PhysRevB.78.165306
Lattice dynamics of II-VI materials using the adiabatic bond-charge model, Physical Review B, vol.53, issue.14, pp.9052-9058, 1996. ,
DOI : 10.1103/PhysRevB.53.9052
Molecular behavior in the vibronic and excitonic properties of hydrogenated silicon nanoparticles, Physical Review B, vol.76, issue.15, pp.76-155316, 2007. ,
DOI : 10.1103/PhysRevB.76.155316
Quantum kinetic equation for electronic transport in nondegenerate semiconductors, Physical Review B, vol.36, issue.12, pp.6602-6608, 1987. ,
DOI : 10.1103/PhysRevB.36.6602
Phonon modes in InAs quantum dots, Physical Review B, vol.63, issue.19, p.195315, 2001. ,
DOI : 10.1103/PhysRevB.63.195315
The one phonon Raman spectrum in microcrystalline silicon, Solid State Communications, vol.39, issue.5, pp.625-629, 1981. ,
DOI : 10.1016/0038-1098(81)90337-9
Sum Rule for Lattice Vibrations; Application to Forces in Diamond Structures, Physical Review, vol.129, issue.5, pp.1959-1961, 1963. ,
DOI : 10.1103/PhysRev.129.1959
Adiabatic bond charge model for the phonons in A3B5 semiconductors, Solid State Communications, vol.18, issue.6, pp.673-675, 1976. ,
DOI : 10.1016/0038-1098(76)91757-9
Etude par simulation Monte-Carlo de MOSFET ultra-courts à grille multiple sur SOI, 2005. ,
Théorie du blocage de Coulomb appliquée aux nanoctructures semiconductrices : modélisation des dispositifs à nanocristaux de silicium, 2003. ,
tight-binding and an effective-mass description of silicon quantum dots, Physical Review B, vol.66, issue.19, p.193307, 2002. ,
DOI : 10.1103/PhysRevB.66.193307
Comparison of a density functional theory and a Hartree treatment of silicon quantum dot, Journal of Applied Physics, vol.92, issue.6, p.3141, 2002. ,
DOI : 10.1063/1.1499524
Theoretical investigation of negative differential conductance regime of silicon nanocrystal single-electron devices, IEEE Transactions on Electron Devices, vol.53, issue.5, pp.1268-1273, 2006. ,
DOI : 10.1109/TED.2006.871875
Simple one-dimensional model for electronic structure calculation of unbiased and biased silicon quantum dots in Coulomb blockade applications, Journal of Applied Physics, vol.94, issue.8, p.5053, 2003. ,
DOI : 10.1063/1.1610803
Electronic properties of semiconductor quantum dots for Coulomb blockade applications, Physica E: Low-dimensional Systems and Nanostructures, pp.2-4, 2004. ,
From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters, Journal of Computational Electronics, vol.13, issue.1, pp.35-48, 2006. ,
DOI : 10.1007/s10825-006-7917-3
Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation, Physical Review B, vol.71, issue.12, pp.71-125327, 2005. ,
DOI : 10.1103/PhysRevB.71.125327
A Calculation of the Phonon Frequencies in Sodium, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.283, issue.1392, pp.33-49, 1392. ,
DOI : 10.1098/rspa.1965.0005
Theory of Lattice Dynamics of Covalent Crystals, 1974. ,
Phonons in semiconductors, CRC Critical Reviews in Solid State Sciences, vol.3, issue.3, pp.273-334, 1973. ,
Valence force potentials for calculating crystal vibrations in silicon, Journal of Physics and Chemistry of Solids, vol.32, issue.8, pp.1761-1769, 1970. ,
DOI : 10.1016/S0022-3697(71)80142-7
Datasheet de la mémoire flash Spansion S29CD016J/S29CL016J, 2006. ,
Electron-phonon interaction in quantum dots: A solvable model, Physical Review B, vol.62, issue.11, pp.7336-7343, 2000. ,
DOI : 10.1103/PhysRevB.62.7336
Room temperature nanocrystalline silicon single-electron transistors, Journal of Applied Physics, vol.94, issue.1, p.633, 2003. ,
DOI : 10.1063/1.1569994
Critical study of perturbative approaches to tunneling, Physical Review B, vol.46, issue.8, pp.4938-4943, 1992. ,
DOI : 10.1103/PhysRevB.46.4938
Phonon modes in Si [111] nanowires, Physical Review B, vol.69, issue.7, p.75213, 2004. ,
DOI : 10.1103/PhysRevB.69.075213
A silicon nanocrystals based memory, Applied Physics Letters, vol.68, issue.10, pp.1377-1379, 1996. ,
DOI : 10.1063/1.116085
Long-range forces and the dynamical equations for homopolar crystals of the diamond type, Soviet Physics -Solid State, vol.3, issue.3, pp.685-693, 1961. ,
Lattice Dynamics and Spectroscopic Properties by a Valence Force Potential of Diamondlike Crystals: C, Si, Ge, and Sn, The Journal of Chemical Physics, vol.56, issue.3, p.1022, 1972. ,
DOI : 10.1063/1.1677264
Phonon dispersion on a GaAs(110) surface studied using the adiabatic bond charge model, Journal of Physics: Condensed Matter, vol.8, issue.10, pp.1345-58, 1996. ,
DOI : 10.1088/0953-8984/8/10/007
Surface phonons on InP(110) with the adiabatic bond-charge model, Physical Review B, vol.53, issue.23, pp.15675-15681, 1996. ,
DOI : 10.1103/PhysRevB.53.15675
Phonons in zinc-blende and wurtzite phases of GaN, AlN, and BN with the adiabatic bond-charge model, Physical Review B, vol.62, issue.8, pp.5028-5035, 2000. ,
DOI : 10.1103/PhysRevB.62.5028
Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers, Physical Review B, vol.72, issue.3, p.35337, 2005. ,
DOI : 10.1103/PhysRevB.72.035337
Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation, Physical Review Letters, vol.86, issue.21, p.4930, 2001. ,
DOI : 10.1103/PhysRevLett.86.4930
About single-electron devices and circuits, 1997. ,
New Bond-Charge Model for the Lattice Dynamics of Diamond-Type Semiconductors, Physical Review Letters, vol.33, issue.6, pp.371-374, 1974. ,
DOI : 10.1103/PhysRevLett.33.371
Molecular Vibrations -The Theory of Infrared and laman Vibrational Spectra, 1955. ,
Phonon mode study of Si nanocrystals using micro???Raman spectroscopy, Journal of Applied Physics, vol.78, issue.11, p.6705, 1995. ,
DOI : 10.1063/1.360494
Novel Hybrid Voltage Controlled Ring Oscillators Using Single Electron and MOS Transistors, IEEE Transactions On Nanotechnology, vol.6, issue.2, pp.146-157, 2007. ,
DOI : 10.1109/TNANO.2007.891817
URL : http://ir.semi.ac.cn/handle/172111/9572
Raman shifts in Si nanocrystals, Applied Physics Letters, vol.69, issue.2, p.200, 1996. ,
DOI : 10.1063/1.117371
Comparison of models for Raman spectra of Si nanocrystals, Physical Review B, vol.55, issue.15, pp.9263-9266, 1997. ,
DOI : 10.1103/PhysRevB.55.9263
Microscopic calculations of Raman scattering from acoustic phonons confined in Si nanocrystals, Physical Review B, vol.58, issue.11, pp.6712-6715, 1998. ,
DOI : 10.1103/PhysRevB.58.6712
Elements of Advanced Quantum Theory, 1969. ,