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hal-00491499v1  Communication dans un congrès
Arantxa Vilalta-ClementeMagali MoralesM.-P. ChauvatYadira Arroyo-Rojas DasilvaMarie A. Poisson et al.  Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. 7602, pp.76020K, 2010, Proceedings of SPIE
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hal-00480156v1  Article dans une revue
N. MeyerM. RusuS. WiesnerS. HartmannD. Keiper et al.  OVPD technology
European Physical Journal: Applied Physics, EDP Sciences, 2009, 46 (1), pp.1-4. <10.1051/epjap/2009028>
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hal-00569694v1  Article dans une revue
E SakalauskasH BehmenburgC HumsP SchleyG Rossbach et al.  Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (36), pp.365102. <10.1088/0022-3727/43/36/365102>
hal-00483615v1  Article dans une revue
Arantxa Vilalta-ClementeM. A. PoissonH. BehmenburgC. GiesenM. Heuken et al.  The structure of InAIN/GaN heterostructures for high electron mobility transistors
physica status solidi (a), Wiley, 2010, 207 (5), pp.1105-1108