Recherche

hal-00785001v1 Communication dans un congrès
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, C. Bishop et al. Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE
ICMOVPE-XVI, May 2012, Busan, South Korea

hal-00785029v1 Communication dans un congrès
P.L. Bonanno, S. Gautier, Y. El Gmili, T. Moudakir, A.A. Sirenko et al. Nondestructive mapping of chemical composition and Structural quality of Group III-Nitride nanowires using submicron beam synchrotron-based X-ray diffraction
E-MRS Spring 2012, May 2012, Strasbourg, France

hal-00784998v1 Communication dans un congrès
S. Gautier, T. Moudakir, D. Rogers, F. H. Teherani, Y. El Gmili et al. Wafer-scale GaN Growth on ZnO Buffered Sapphire and GaN Film Bonding on Glass Substrates
ICMOVPE-XVI, May 2012, Busan, South Korea

hal-00784989v1 Article dans une revue
S. Gautier, T. Moudakir, G. Patriarche, D.J. Rogers, V. E. Sandana et al. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Journal of Crystal Growth, Elsevier, 2013, 370, pp.63-67. <10.1016/j.jcrysgro.2012.08.048>

hal-00784993v1 Article dans une revue
T. Moudakir, S. Gautier, S. Suresh, M. Abid, Y. El Gmili et al. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
Journal of Crystal Growth, Elsevier, 2013, 370, pp.12-15. <10.1016/j.jcrysgro.2012.09.061>

hal-00806864v1 Article dans une revue
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau et al. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
Journal of Crystal Growth, Elsevier, 2012, 370, pp.57-62. <10.1016/j.jcrysgro.2012.08.041>

hal-01292307v1 Article dans une revue
P. L. Bonanno, S. Gautier, Y. El Gmili, T. Moudakir, A. A. Sirenko et al. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction
Thin Solid Films, Elsevier, 2013, 541 (SI), pp.46-50. <10.1016/j.tsf.2012.12.099>

hal-01117213v1 Communication dans un congrès
S. Sundaram, P. Renaud, X. Li, Y. El Gmili, K. Pantzas. Novel BGaN Nanorods and Selectivity Studies on Patterned GaN and AlN/Si (111) Tem- plates by Metal Organic Chemical Vapor Deposition
17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland

hal-01117214v1 Communication dans un congrès
S. Sundaram, P. Renaud, X. Li, Y. El Gmili, K. Pantzas. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices
E-MRS Spring Meeting, May 2014, Lille, France

hal-01170572v1 Communication dans un congrès
X. Li, S. Sundaram, Y. El Gmili, Frédéric Genty, S. Bouchoule et al. MOVPE grown periodic AlN/BAlN heterostructure with high boron content
ICMOVPE, 2015, Lausanne, Switzerland. Journal of Crystal Growth, 414, 2015

hal-01117195v1 Communication dans un congrès
Jean-Paul Salvestrini, S. Sundaram, G. Orsal, M. Arif, Y. El Gmili et al. Vers l’amélioration des rendements de conversion dans la filiere des cellules InGaN/GaN
Journes Nationales du Photovoltaïque, 2014, Dourdan, France

hal-00930183v1 Communication dans un congrès
Jean-Paul Salvestrini, G. Orsal, Y. El Gmili, T. Moudakir, S. Sundaram et al. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics
IMRC 2013, Aug 2013, Cancun, Mexico

hal-00736780v1 Communication dans un congrès
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, A. Ahaitouf et al. Optical Characterization Of Thick InGaN Layers For Solar Cell Applications
International conference on Advanced Materials for Photonics, Sensing and Energy Conversion Applications, Dec 2012, El Jadida, Morocco

hal-00815384v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir et al. Characteristics of the surface microstructures in thick InGaN layers on GaN
Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118

hal-00845424v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran et al. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study
Acta Materialia, Elsevier, 2013, 61, pp.6587-6596

hal-01420490v1 Article dans une revue
M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene et al. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber
Solar Energy Materials and Solar Cells, Elsevier, 2016, 159, pp.405 - 411. <10.1016/j.solmat.2016.09.030>

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