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hal-00784989v1 Article dans une revue
S. Gautier, T. Moudakir, G. Patriarche, D.J. Rogers, V. E. Sandana et al. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Journal of Crystal Growth, Elsevier, 2013, 370, pp.63-67. <10.1016/j.jcrysgro.2012.08.048>

hal-00784993v1 Article dans une revue
T. Moudakir, S. Gautier, S. Suresh, M. Abid, Y. El Gmili et al. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
Journal of Crystal Growth, Elsevier, 2013, 370, pp.12-15. <10.1016/j.jcrysgro.2012.09.061>

hal-00806864v1 Article dans une revue
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau et al. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
Journal of Crystal Growth, Elsevier, 2012, 370, pp.57-62. <10.1016/j.jcrysgro.2012.08.041>

hal-00554254v1 Article dans une revue
W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir et al. Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area Growth
Journal of Crystal Growth, Elsevier, 2010, pp.10.1016/jcrysgro

hal-00554231v1 Article dans une revue
S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal et al. Deep structural analysis of novel BGaN material layers grown by MOVPE
Journal of Crystal Growth, Elsevier, 2010, pp.10.1016. <10.1016>

hal-00747027v1 Article dans une revue
K. Pantzas, G. Patriarche, D. Troadec, S. Gautier, T. Moudakir et al. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
Nanotechnology, Institute of Physics: Hybrid Open Access, 2012, 23, pp.455707-455716

hal-00578877v1 Communication dans un congrès
S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran et al. B(Al,Ga)N materials capability for advanced optic devices structures in the UV range
SPIE 2011, Jan 2011, San Francisco, United States

hal-00554354v1 Communication dans un congrès
M. Abid, S. Gautier, T. Moudakir, G. Orsal, V. Ravindran et al. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE
ISGN 3, Jun 2010, Montpellier, France

hal-00554350v1 Communication dans un congrès
S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal et al. Deep structural analysis of novel BGaN material layers grown by MOVPE
ICMOVPE XV, Jun 2010, Lake Tahoe, United States

hal-00554340v1 Communication dans un congrès
W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir et al. Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area Growth
ICMOVPE XV, Jun 2010, Lake Tahoe, United States

hal-00573029v1 Communication dans un congrès
M. Abid, T. Moudakir, S. Gautier, G. Orsal, A. En Naciri et al. Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors
Optique Marseille 2011, Jul 2011, Marseille, France

hal-00397607v1 Communication dans un congrès
W. H. Goh, P. L. Bonanno, J. Martin, S. Gautier, N. Maloufi et al. Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction
EW MOVPE 2009, Jun 2009, Germany. pp.1-1, 2009

hal-00930183v1 Communication dans un congrès
Jean-Paul Salvestrini, G. Orsal, Y. El Gmili, T. Moudakir, S. Sundaram et al. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics
IMRC 2013, Aug 2013, Cancun, Mexico

hal-00644001v1 Article dans une revue
K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir et al. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials
physica status solidi (a), Wiley, 2012, 209 (1), pp.25-28. <10.1002/pssa.201100154>

hal-00815384v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir et al. Characteristics of the surface microstructures in thick InGaN layers on GaN
Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118

hal-00845424v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran et al. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study
Acta Materialia, Elsevier, 2013, 61, pp.6587-6596

hal-01420490v1 Article dans une revue
M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene et al. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber
Solar Energy Materials and Solar Cells, Elsevier, 2016, 159, pp.405 - 411. <10.1016/j.solmat.2016.09.030>

hal-00666779v1 Article dans une revue
M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
Applied Physics Letters, American Institute of Physics, 2012, 100, pp.051101

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