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hal-00181651v1 Communication dans un congrès
A. Ougazzaden, S. Gautier, T. Aggerstam, J. Martin, Sidi Ould Saad Hamady et al. Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications
Symposium on Integrated Optoelectronic Devices, 2007, San Jose, United States

hal-00449555v1 Communication dans un congrès
G. Orsal, T. Moudakir, N. Maloufi, S. Gautier, F. Jomard et al. Growth and characterisation of new BInGaN quaternary alloys
ICNS-8, Oct 2009, North Korea

hal-00415609v1 Communication dans un congrès
T. Moudakir, S. Gautier, G. Orsal, N. Maloufi, D. J. Rogers et al. MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications
EW-MOVPE XIII Conference, Jun 2009, Ulm, Germany. pp.249, 2009

hal-00646180v1 Article dans une revue
S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard et al. MOVPE growth of BInGaN quaternary alloys and characterization of B content
Journal of Crystal Growth, Elsevier, 2010

hal-00181787v1 Article dans une revue
A. Ougazzaden, S. Gautier, C. Sartel, N. Maloufi, J. Martin et al. BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
Journal of Crystal Growth, Elsevier, 2007, 298, pp.316-319

hal-00555239v1 Article dans une revue
S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard et al. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
Journal of Crystal Growth, Elsevier, 2010, 312, pp.641-644

hal-00554242v1 Article dans une revue
S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard et al. Metal-organic vapor phase epitaxy of BInGaN quaternary alloys and characterization of boron content
Journal of Crystal Growth, Elsevier, 2010, 312, pp.641-644

hal-00554304v1 Communication dans un congrès
A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, G. Orsal, T. Moudakir et al. Epitaxial MOVPE Growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si(111) substrates
SPIE Photonic West, Jan 2010, San Francisco, United States

hal-00554294v1 Communication dans un congrès
A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, G. Orsal, T. Moudakir et al. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates
SPIE Photonic West, Jan 2010, United States. 7603, pp.76031D-1, 2010

hal-00181630v1 Article dans une revue
S. Gautier, C. Sartel, Sidi Ould Saad Hamady, N. Maloufi, J. Martin et al. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate
Superlattices and Microstructures, Elsevier, 2006, 40, pp.233-238

hal-00573029v1 Communication dans un congrès
M. Abid, T. Moudakir, S. Gautier, G. Orsal, A. En Naciri et al. Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors
Optique Marseille 2011, Jul 2011, Marseille, France

hal-00448880v1 Article dans une revue
S. Gautier, F. Wyczisk, G. Garry, D. Mcgrouther, J. N. Chapman et al. Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (3), pp.1655-1658

hal-01288818v1 Article dans une revue
E. Chikoidze, Jurgen Von Bardeleben, Y. Dumont, F. Jomard, O. Gorochov. Influence of annealing on the structural and magnetic properties of epitaxial Zn1–xMnxO films grown by MOCVD on sapphire
physica status solidi (c), Wiley, 2006, 3 (4), pp.1001--1004. <10.1002/pssc.200564651>

hal-00181879v1 Communication dans un congrès
A. Ougazzaden, S. Gautier, C. Sartel, N. Maloufi, J. Martin et al. BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
IC MOVPE, 2006, Myazaki, Japan

hal-00181874v1 Communication dans un congrès
S. Gautier, C. Sartel, Sidi Ould Saad Hamady, N. Maloufi, J. Martin et al. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate
EMRS spring meeting, 2006, Nice, France

hal-00181892v1 Communication dans un congrès
S. Gautier, C. Sartel, J. Martin, Sidi Ould Saad Hamady, P. Bonanno et al. Nouveau matériau a grand gap BGaN pour les applications optoelectroniques dans l'ultraviolet : croissance et caractérisation
JNOG, 2006, Metz, France

hal-00666779v1 Article dans une revue
M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
Applied Physics Letters, American Institute of Physics, 2012, 100, pp.051101

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