Recherche

hal-00643996v1 Article dans une revue
A. Ahaitouf, Jean-Paul Salvestrini, H. Srour. Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n-InP
Journal of Semiconductors, 2011, 32 (10), pp.104002

hal-00785001v1 Communication dans un congrès
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, C. Bishop et al. Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE
ICMOVPE-XVI, May 2012, Busan, South Korea

hal-00806864v1 Article dans une revue
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau et al. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
Journal of Crystal Growth, Elsevier, 2012, 370, pp.57-62. <10.1016/j.jcrysgro.2012.08.041>

hal-00596913v1 Communication dans un congrès
H. Srour, Jean-Paul Salvestrini, B. Assouar, A. Ahaitouf, G. Orsal et al. Optimisation et étude de la résistance spécifique des contacts ohmiques sur les hétérostructures BGaN/AlN/GaN pour une application dans les photodétecteurs UV "Solar Blind
Congrès International sur les Energies Renouvelables et l'Efficacité Energétique (CIEREE 2011), Apr 2011, Fès, Maroc. pp.143, 2011

hal-00720225v1 Article dans une revue
A. Ahaitouf, H. Srour, Sidi Ould Saad Hamady, Nicolas Fressengeas, A. Ougazzaden et al. Interface states effects in GaN Schottky diodes
Thin Solid Films, Elsevier, 2012

hal-00323142v1 Article dans une revue
P. Thevenin, M. Eliaoui, A. Ahaitouf, A. Soltani, A. Bath. Influence of the deposition parameters on the texture of boron nitride thin films synthesized in a microwave plasma-enhanced reactor
Surface and Coatings Technology, Elsevier, 2006, 200, pp.6444-6448

hal-01117218v1 Communication dans un congrès
A. Ahaitouf, C. Chevallier, Jean-Paul Salvestrini, A. Ougazzaden. Contribution to solar concentrators design for photovoltaic application
2nd International Renewable and Sustainable Energy Conference IRSEC, Oct 2014, Ouarzazate, Morocco

hal-00573026v1 Communication dans un congrès
H. Srour, Jean-Paul Salvestrini, B. Assouar, Sidi Ould Saad Hamady, A. Ahaitouf et al. Ohmic and Schottky contacts for BGaN based UV photo- and α,β detectors
E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY, May 2011, Nice, France

hal-00765273v1 Communication dans un congrès
A. Ahaitouf, S. Amor, H. Srour, A. Ougazzaden, Jean-Paul Salvestrini. DLTS investigations of carrier traps and interface states in large internal gain UV photodetectors based on BGaN wide band gap semiconductor
International Conference on Advanced Materials for Photonics, Sensing and Energy Conversion Applications, Dec 2012, El Jadida, Morocco

hal-00765250v1 Communication dans un congrès
S. Amor, A. Ahaitouf, H. Srour, N. Es-Sbai, A. Ougazzaden et al. Electrical and optical characterizations of BGaN UV photodetectors
International Conference on Advanced Materials for Photonics, Sensing and Energy Conversion Applications, Dec 2012, El Jadida, Morocco

hal-00930183v1 Communication dans un congrès
Jean-Paul Salvestrini, G. Orsal, Y. El Gmili, T. Moudakir, S. Sundaram et al. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics
IMRC 2013, Aug 2013, Cancun, Mexico

hal-00579824v1 Communication dans un congrès
A. Ahaitouf, Sidi Ould Saad Hamady, Jean-Paul Salvestrini, H. Srour. Analyse et caractérisation de diodes Schottky Pt/n-GaN
Matériaux 2010, Nov 2010, Mahdia, Tunisie

hal-00736780v1 Communication dans un congrès
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, A. Ahaitouf et al. Optical Characterization Of Thick InGaN Layers For Solar Cell Applications
International conference on Advanced Materials for Photonics, Sensing and Energy Conversion Applications, Dec 2012, El Jadida, Morocco

hal-00642175v1 Communication dans un congrès
Jean-Paul Salvestrini, A. Ahaitouf, H. Srour, S. Gautier, T. Moudakir et al. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
SPIE Photonic West, Jan 2012, San Francisco, United States. 8268, pp.82682S, 2012

hal-00815384v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir et al. Characteristics of the surface microstructures in thick InGaN layers on GaN
Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118

hal-00845424v1 Article dans une revue
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran et al. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study
Acta Materialia, Elsevier, 2013, 61, pp.6587-6596

hal-00323131v1 Article dans une revue
M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, J.P. Charles et al. Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junction in avalanche breakdown
Journal of Applied Physics, American Institute of Physics, 2004, 95 (4), pp.1822-1828

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