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hal-01067808v1  Communication dans un congrès
Romain MonthéardMarise BafleurVincent BoitierJean-Marie DilhacNicolas Nolhier et al.  An aeroacoustic energy harvester for supplying power to embedded sensors in aircrafts
Quatrièmes Journées Nationales sur la Récupération et le Stockage d'Energie (JNRSE 2014), Apr 2014, ANNECY, France
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hal-00195362v1  Communication dans un congrès
Philippe RenaudAmaury GendronMarise BafleurNicolas NolhierHigh robustness PNP-based structure for the ESD protection of high voltage I/Os in an advanced smart power technology
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2007, BOSTON, United States. pp.359, 2007
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hal-00722641v1  Communication dans un congrès
Antoine DelmasAmaury GendronMarise BafleurNicolas NolhierChai GillTransient Voltage Overshoots of High Voltage ESD Protections Based on Bipolar Transistors in Smart Power Technology
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2010, AUSTIN, United States. pp.253-256, 2010
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hal-00195294v1  Article dans une revue
Christophe SalameroNicolas NolhierAmaury GendronMarise BafleurPatrice Besse et al.  TCAD methodology for ESD robustness prediction of smart power ESD devices
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6 (3), pp.399-407
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hal-00941891v1  Article dans une revue
Houssam ArbessMarise BafleurDavid TrémouillesMoustafa ZerarkaCombined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2013, 14 (1), pp. 432-440. <10.1109/TDMR.2013.2281726>
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hal-00143927v1  Article dans une revue
Géraldine BertrandChristelle DelageMarise BafleurNicolas NolhierJean-Marie Dorkel et al.  Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology
IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers, 2001, 36 (9), pp.1373-1381