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hal-01286807v1  Communication dans un congrès
Lotfi AyariMohammed AyadEstelle BykMarc CamiadeGuillaume Neveux et al.  An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS
Microwave Measurement Conference (ARFTG), 2015 85th , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Measurement Conference (ARFTG), 2015 85th <10.1109/ARFTG.2015.7162905>
hal-01286576v1  Communication dans un congrès
Lotfi AyariGuillaume NeveuxDenis BarataudMohammed AyadEstelle Byk et al.  Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. IEEE, pp.361-364, 2015, <10.1109/EuMIC.2015.7345144>
hal-00939981v1  Article dans une revue
Pierre MedrelAudrey MartinTibault ReveyrandGuillaume NeveuxDenis Barataud et al.  A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2013, pp.1-9. <10.1017/S1759078713000962>