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hal-00747607v1
Communication dans un congrès
Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOSICSCRM, Sep 2011, Cleveland, United States. 717-720, pp.1093-1096, 2012, <10.4028/www.scientific.net/MSF.717-720.1093>
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hal-00391428v1
Communication dans un congrès
Dominique Tournier, P. Waind, Philippe Godignon, L. Coulbeck, José Millán et al. 4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT ModulesICSCRM, Sep 2005, Pittsburgh, PA, United States. 527-529, pp.1163-1166, 2006, <10.4028/www.scientific.net/MSF.527-529.1163>
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hal-00391431v1
Communication dans un congrès
Dominique Tournier, Miquel Vellvehi, Philippe Godignon, Xavier Jordà, José Millán. Double Gate 180V-128mA/mm SiC-MESFET for Power Switch ApplicationsICSCRM, Sep 2005, Pittsburgh, PA, United States. 527-529, pp.1243-1246, 2006, <10.4028/www.scientific.net/MSF.527-529.1243>
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hal-00391376v1
Communication dans un congrès
Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard et al. High Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsECSCRM, Sep 2008, Barcelona, Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.911-914, 2009, <10.4028/www.scientific.net/MSF.615-617.911>
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