Recherche

hal-00400634v1 Article dans une revue
Hervé Morel, Dominique Bergogne, Dominique Planson, Bruno Allard, Régis Meuret. New Applications in Power Electronics Based on SiC Power Devices
Materials Science Forum, Trans Tech Publications Inc., 2008, 600-603, pp.925-930. <10.4028/www.scientific.net/MSF.600-603.925>

hal-00874666v1 Communication dans un congrès
Khalil El Falahi, Stanislas Hascoët, Cyril Buttay, Pascal Bevilacqua, Luong Viet Phung et al. High temperature, Smart Power Module for aircraft actuators
HiTEN'13, Jul 2013, Oxford, United Kingdom. 2013

hal-00747341v1 Communication dans un congrès
Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Pulse characterization of optically triggered SiC thyristors
ICSCRM, Sep 2011, Cleveland, United States. 717-720, pp.1179-1182, 2012, <10.4028/www.scientific.net/MSF.717-720.1179>

hal-01113181v1 Pré-publication, Document de travail
Florian Chevalier, Pierre Brosselard, Dominique Planson, Pascal Bevilacqua, Grégory Grosset et al. A complete methodology for determining the influence of the design for 3.3 kV silicon carbide diodes : JBS compared to Schottky
2013

hal-00413349v1 Communication dans un congrès
Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua et al. State of the art of High Temperature Power Electronics
Microtherm, Jun 2009, Lodz, Poland. pp.8-17, 2009

hal-01113182v1 Pré-publication, Document de travail
Florian Chevalier, Pierre Brosselard, Dominique Planson, Pascal Bevilacqua, Grégory Grosset et al. Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability
2013

hal-00373016v1 Communication dans un congrès
Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel et al. SiC Power Semiconductor Devices for new Applications in Power Electronics
IEEE/EPE-PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, 2008, <10.1109/EPEPEMC.2008.4635632>

hal-00391376v1 Communication dans un congrès
Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard et al. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
ECSCRM, Sep 2008, Barcelona, Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.911-914, 2009, <10.4028/www.scientific.net/MSF.615-617.911>

hal-00140107v1 Article dans une revue
Christophe Raynaud, S. Wang, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension
Diamond and Related Materials, Elsevier, 2004, 13 (9), pp.1697-1703

hal-00476195v1 Article dans une revue
Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
Diamond and Related Materials, Elsevier, 2010, 19 (1), pp.1-6. <10.1016/j.diamond.2009.09.015>

hal-00874465v1 Article dans une revue
Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi et al. Die attach using silver sintering. Practical implementation and analysis
European Journal of Electrical Engineering, Lavoisier, 2013, 16 (3-4), pp.293-305. <10.3166/ejee.16.293-305>

hal-00597432v1 Article dans une revue
Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua et al. State of the art of high temperature power electronics
Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. <10.1016/j.mseb.2010.10.003>

hal-00141603v1 Article dans une revue
Dominique Planson, Marie-Laure Locatelli, S. Ortolland, Jean-Pierre Chante, H. Mitlehner et al. Periphery protection for silicon carbide devices: State of the art and simulation
Materials Science and Engineering: B, Elsevier, 1997, 46 (1-3), pp.210-217

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