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hal-00195362v1  Communication dans un congrès
Philippe RenaudAmaury GendronMarise BafleurNicolas NolhierHigh robustness PNP-based structure for the ESD protection of high voltage I/Os in an advanced smart power technology
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2007, BOSTON, United States. pp.359, 2007
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hal-00722641v1  Communication dans un congrès
Antoine DelmasAmaury GendronMarise BafleurNicolas NolhierChai GillTransient Voltage Overshoots of High Voltage ESD Protections Based on Bipolar Transistors in Smart Power Technology
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2010, AUSTIN, United States. pp.253-256, 2010
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hal-00195294v1  Article dans une revue
Christophe SalameroNicolas NolhierAmaury GendronMarise BafleurPatrice Besse et al.  TCAD methodology for ESD robustness prediction of smart power ESD devices
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6 (3), pp.399-407