6 résultats  enregistrer la recherche


...
hal-01004495v1  Communication dans un congrès
Gaëtan ToulonAbdelhakim BourennaneKarine IsoirdImpact of a backside Schottky contact on the thyristor characteristics at high temperature
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.131 à 136, 2012
...
hal-01234269v1  Communication dans un congrès
Adem LaleNicolas VideauAbdelilah El KhadiryAbdelhakim BourennaneFrédéric RichardeauRealisation and characterisation of compact generic IGBT-based multiphase power converters using the two-chip multi-pole integration approach
4th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD Forum 2015), April 21-23 2015, Grenoble (FRANCE), Apr 2015, Grenoble, France. 2015
...
hal-01234236v1  Communication dans un congrès
Adem LaleAbdelhakim BourennaneAbdelilah El KhadiryFrederic RichardeauA generic Reverse Conducting IGBT structure for monolithic switching cells integration
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. 2014, <10.1109/EPE.2014.6910977>
...
hal-01019388v1  Article dans une revue
Gaëtan ToulonAbdelhakim BourennaneKarine IsoirdAnalysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (11), p 3814-3820. <10.1109/TED.2013.2280554>