XAFS Studies of Self-Aligned Platinum Silicide Thin Films at the Pt M3,2 Edge and the Si K-Edge

S. Naftel , A. Bzowski , T. Sham , D.-X. Xu , S. Das

Pt-Si thin films with the thickness of several hundred Å prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption fine structure spectroscopy at the Pt M3,2 edge and the Si K-edge. It is found that, under favourable conditions, single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The M3,2 edge exhibits XANES features very similar to those of the Pt L3,2 edge obtained from the samples. The analysis of the Pt M3,2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation.

Domaines: Articles anciens

S. Naftel, A. Bzowski, T. Sham, D.-X. Xu, S. Das. XAFS Studies of Self-Aligned Platinum Silicide Thin Films at the Pt M3,2 Edge and the Si K-Edge. Journal de Physique IV Proceedings, 1997, 7 (C2), pp.C2-1131-C2-1132. ⟨10.1051/jp4:19972158⟩. ⟨jpa-00255221⟩