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Article Dans Une Revue Journal de Physique IV Proceedings Année : 1996

Parameter Extraction of MOSFETs Operated at Low Temperature

E. Simoen
  • Fonction : Auteur
C. Claeys
  • Fonction : Auteur
J. Martino
  • Fonction : Auteur

Résumé

In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

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Dates et versions

jpa-00254223 , version 1 (04-02-2008)

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E. Simoen, C. Claeys, J. Martino. Parameter Extraction of MOSFETs Operated at Low Temperature. Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-29-C3-42. ⟨10.1051/jp4:1996305⟩. ⟨jpa-00254223⟩

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