Luminescence of silicon crystallites

C. Delerue (1) , E. Martin (1) , Jean-Francois Lampin (1) , G. Allan (1) , M. Lannoo

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The physical origin of the red and infrared light emissions from porous silicon are examined. The red band can come from the direct radiative recombination of excitons in silicon crystallites. The infrared emission can be explained by their recombination on silicon dangling bonds. Finally, the influence of the exchange and valley-orbit splittings on the photoluminescence lifetime is analyzed.

Domaines: Articles anciens

C. Delerue, E. Martin, Jean-Francois Lampin, G. Allan, M. Lannoo. Luminescence of silicon crystallites. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-359-C5-362. ⟨10.1051/jp4:1993575⟩. ⟨jpa-00251662⟩