Quantum wires obtained by dislocation slipping

F. Voillot , Robert Carles , Michel Goiran , C. Guasch , J. Peyrade , Eléna Bedel-Pereira

Dislocation slipping is used as an atomic scale tool to cut a 5 nm GaAs single quantum well (QW) grown by MBE on a (001) GaAs substrate into quantum wires (QWW). Three point deformation bending is used to control dislocation slipping. The minimum value of the QWW widths is evaluated to 25 nm. PL studies after deformation show intense peak, shifted in regard to the undeformed SQW in good agreement with theory. Raman scattering results confirm the additional lateral confinement.

Domaines: Articles anciens

F. Voillot, Robert Carles, Michel Goiran, C. Guasch, J. Peyrade, et al.. Quantum wires obtained by dislocation slipping. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-339-C5-342. ⟨10.1051/jp4:1993570⟩. ⟨jpa-00251657⟩