Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device

J. Couturier , J.C Harmand (1) , P. Voisin

1 CNET Bagneux - France Telecom, Centre National d'Etudes de Télécommunications, Laboratoire de Bagneux

We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice PIN structures. Bistability results, in analogy with the self electro-optical effect device, from a positive feedback mecanism due to the interplay between Wannier-Stark effect, built-in field and screening by photocarriers.

Domaines: Articles anciens

J. Couturier, J.C Harmand, P. Voisin. Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device. Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-253-C5-256. ⟨10.1051/jp4:1993549⟩. ⟨jpa-00251635⟩