THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON
Résumé
The presence of carriers in the grain boundary (GB) space charge is taken into account in solving numerically Poisson's equation. This allows one, by using a schematic description of electron excitation, to investigate the theoretical behaviour of the GB recombination velocity, measured by EBIC, in high injection conditions.
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