Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics

Jean-Luc Leray , Olivier Musseau , Philippe Paillet , Jean-Luc Autran , Frédéric Sodi , Yves-Marie Coïc

This paper deals with ionising radiation effects (X or γ-rays) in ferroelectric materials for electronic non-volatile memories. After the recall of main observations, mechanisms are analysed and proposed to take into account the effects in PZT-based capacitors. Fatigue of the hysteresis cycle are studied and linked to irradiation effects. As for irradiation, fatigue shows a damping of hysteresis curves. We show that a connection exists between fatigue and irradiation. A mechanism is proposed based on domain wall motion and pinning.

Domaines: Articles anciens

Jean-Luc Leray, Olivier Musseau, Philippe Paillet, Jean-Luc Autran, Frédéric Sodi, et al.. Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics. Journal de Physique III, 1997, 7 (6), pp.1227-1243. ⟨10.1051/jp3:1997185⟩. ⟨jpa-00249644⟩