Abstract : Au/InSe interface formation was studied and a microscopic Schottky barrier of 0.7 eV was measured in accordance with the value obtained by I( V) and photovoltage measurements. This barrier is formed for submonolayer coverage before any chemical reaction or interdiffusion is evidenced. Its value is not determined by the metal work function as is the case with non reactive metals (Schottky behavior) but may depend on initial interfacial interactions.
https://hal.archives-ouvertes.fr/jpa-00246261
Contributeur : Archives Journal de Physique <>
Soumis le : lundi 1 janvier 1990 - 08:00:00
Dernière modification le : lundi 1 janvier 1990 - 08:00:00
Document(s) archivé(s) le : lundi 10 mai 2010 - 14:30:05
