Dielectric properties of glassy Se80Te20 and Se 80Te10M10 (M = Cd, In and Sb)

Rakesh Arora , A. Kumar

The temperature and frequency dependence of dielectric constant and loss is measured in glassy Se80Te20 and Se80Te 10M10 (M = Cd, In and Sb) in the temperature range 100 K to 330 K and the frequency range 120 Hz to 10 kHz. The dielectric constant and loss are independent of temperature and frequency at low temperatures (T < 200 K). However, at higher temperatures, strong dielectric dispersion occurs. The results are interpreted in terms of a dipolar model which considers the hopping of charge carriers over a potential barrier between charged defect states.

Mots clés: chalcogenide glasses; defect electron energy states; hopping conduction; permittivity; selenium compounds; semiconductors; temperature dependence; Se sub 80 Te sub 10 M sub 10; frequency dependence; dielectric constant; dielectric dispersion; dipolar model; hopping; charge carriers; charge defect states; 100 to 330 K; 120 to 10000 Hz; Se sub 80 Te sub 20; Se sub 80 Te sub 10 Cd sub 10; Se sub 80 Te sub 10 In sub 10; Se sub 80 Te sub 10 Sb sub 10

Domaines: Articles anciens

Rakesh Arora, A. Kumar. Dielectric properties of glassy Se80Te20 and Se 80Te10M10 (M = Cd, In and Sb). Revue de Physique Appliquée, 1990, 25 (2), pp.169-176. ⟨10.1051/rphysap:01990002502016900⟩. ⟨jpa-00246175⟩