Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs

A. Djemel , J. Castaing , Jacques Chevallier

We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining character of these defects is not qualitatively changed by hydrogen.

Mots clés: electron hole recombination; gallium arsenide; hydrogen; III V semiconductors; impurity dislocation interactions; luminescence of inorganic solids; minority carriers; plastic deformation; subboundary structure; III V semiconductor; minority carrier recombination; dislocations; sub boundaries; cathodoluminescence; extended defects; GaAs; GaAs:H

Domaines: Articles anciens

A. Djemel, J. Castaing, Jacques Chevallier. Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs. Revue de Physique Appliquée, 1988, 23 (7), pp.1337-1339. ⟨10.1051/rphysap:019880023070133700⟩. ⟨jpa-00245950⟩