A T.E.M. in situ study of dislocation glide in InSb (III-V compound)

M. Fnaiech , Alain Couret , Daniel Caillard

No abstract available

Mots clés: III V semiconductors; indium antimonide; slip; transmission electron microscope examination of materials; TEM; alpha dislocations; beta dislocations; semiconductor; dislocation glide; microsamples; screw type dislocations; InSb

Domaines: Articles anciens

M. Fnaiech, Alain Couret, Daniel Caillard. A T.E.M. in situ study of dislocation glide in InSb (III-V compound). Revue de Physique Appliquée, 1988, 23 (4), pp.668-668. ⟨10.1051/rphysap:01988002304066800⟩. ⟨jpa-00245817⟩