Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs

H. Bruch , H. Martini , K.-H. Bachem , P. Balk

An experimental study of the VPE growth of GaAs at 1 023 K from the AsH 3-HCl-Ga-H 2 system yields for the dependence of the hole concentration on the technological parameters : p (300 K) ∼ p HCl·p-1GaCl·p1/2AsH3·p Zn. It is concluded that the process takes place under non equilibrium conditions. The PL intensity depends distinctly on the preparation conditions but does not fit a simple model.

Mots clés: gallium arsenide; III V semiconductors; luminescence of inorganic solids; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc; photoluminescence; VPE growth; hole concentration; GaAs:Zn; semiconductor; chemical vapour deposition

Domaines: Articles anciens

H. Bruch, H. Martini, K.-H. Bachem, P. Balk. Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs. Revue de Physique Appliquée, 1978, 13 (12), pp.783-785. ⟨10.1051/rphysap:019780013012078300⟩. ⟨jpa-00244546⟩