Substrate and interface effects in GaAs fet's

Henri Tranduc , P. Rossel , Jacques Graffeuil , C. Azizi , G. Nuzillat , G. Bert

In this paper, the experimental results describing the substrate bias effect on the Schottky gate capacitance-voltage and the DC current-voltage characteristics of GaAs FET's (N-type epilayer on semi-insulating Cr-doped substrate) are reported. These results are accounted for by the formation of a double space-charge in the N-layer and in the S.I. substrate in the vicinity of the interface. A theoretical analysis is proposed and appropriate methods for obtaining both the N active layer and the interface parameters (fixed interface charge value, deep centers density in the S.I. GaAs) are shown. The deep level charge effect on the low temperature drain current-drain voltage characteristics, is described.

Mots clés: gallium arsenide; III V semiconductors; interface electron states; Schottky gate field effect transistors; space charge; substrate bias effect; N layer; interface charge value; deep level charge effect; GaAs Schottky barrier FET's; semiconductor device; capacitance voltage characteristics; DC current voltage characteristics; double space charge; drain characteristics

Domaines: Articles anciens

Henri Tranduc, P. Rossel, Jacques Graffeuil, C. Azizi, G. Nuzillat, et al.. Substrate and interface effects in GaAs fet's. Revue de Physique Appliquée, 1978, 13 (12), pp.655-659. ⟨10.1051/rphysap:019780013012065500⟩. ⟨jpa-00244521⟩