Characterization of undoped high resistivity CdTe grown by a THM method

R. Stuck (1) , J.C. Muller (1) , P. Siffert (1)

1 IReS - Institut de Recherches Subatomiques

Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity.

Mots clés: cadmium compounds; crystal growth from melt; II VI semiconductors; impurity electron states; mass spectra; neutron activation analysis; semiconductor growth; thermally stimulated currents; time of flight spectra; undoped high resistivity CdTe; time of flight technique; nuclear activation; travelling heater method growth; impurity level; thermally stimulated current; secondary ion mass spectrometry; II VI semiconductor; carrier mobility

Domaines: Articles anciens

R. Stuck, J.C. Muller, P. Siffert. Characterization of undoped high resistivity CdTe grown by a THM method. International Symposium On Cadmium Telluride: Physical Properties And Applications 2, 1976, Strasbourg, France. pp.185-188, ⟨10.1051/rphysap:01977001202018500⟩. ⟨jpa-00244139⟩