Characterization of undoped high resistivity CdTe grown by a THM method

Abstract : Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity.
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Communication dans un congrès
International Symposium On Cadmium Telluride: Physical Properties And Applications 2, 1976, Strasbourg, France. 12 (2), pp.185-188, 1977, <10.1051/rphysap:01977001202018500>


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R. Stuck, J.C. Muller, P. Siffert. Characterization of undoped high resistivity CdTe grown by a THM method. International Symposium On Cadmium Telluride: Physical Properties And Applications 2, 1976, Strasbourg, France. 12 (2), pp.185-188, 1977, <10.1051/rphysap:01977001202018500>. <jpa-00244139>

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