ESR in the two phases of the magnetic semiconductor GaCr4S 8

P. Huguet , Georges Alquié , M. Potel , M. Sergent

We present new results obtained from ESR experiments in the paramagnetic and magnetic ordered states of both crystallographic phases of the magnetic semiconductor GaCr4S8. We observe a critical behaviour typical of magnetic phase transitions, resulting in a shift and a broadening of the resonance line as well as a distortion of its shape. These features are discussed and related to the presence of magnetization fluctuations.

Mots clés: EPR line breadth; gallium compounds; magnetic semiconductors; magnetic transitions; magnetisation; ternary semiconductors; ternary semiconductor; paramagnetic state; line broadening; ESR; magnetic semiconductor; GaCr sub 4 S sub 8; magnetically ordered states; critical behaviour; magnetic phase transitions; magnetization fluctuations

Domaines: Articles anciens

P. Huguet, Georges Alquié, M. Potel, M. Sergent. ESR in the two phases of the magnetic semiconductor GaCr4S 8. Journal de Physique Lettres, 1983, 44 (10), pp.393-401. ⟨10.1051/jphyslet:019830044010039300⟩. ⟨jpa-00232208⟩