Percolation and superconductivity in ion-implanted aluminium films

Abstract : Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a volume concentration of 45 % Si. These results are compared to those obtained by other authors on films prepared by evaporation on cold substrate.
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Journal articles
Journal de Physique Lettres, 1977, 38 (21), pp.435-437. <10.1051/jphyslet:019770038021043500>


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Submitted on : Saturday, January 1, 1977 - 8:00:00 AM
Last modification on : Tuesday, March 4, 2008 - 10:47:35 AM

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F. Meunier, P. Pfeuty, A.M. Lamoise, J. Chaumont, H. Bernas, et al.. Percolation and superconductivity in ion-implanted aluminium films. Journal de Physique Lettres, 1977, 38 (21), pp.435-437. <10.1051/jphyslet:019770038021043500>. <jpa-00231414>

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