Superconducting properties of aluminium thin films after ion implantation at liquid helium temperatures

Abstract : Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on the implanted ion dose and range distribution as well as on radiation damage effects. The higher limit of Tc ranges from 2.7 K to 4.1 K for Al, O and He implantations. It reaches 6.75 K for H, at an average concentration near AlH2.
Type de document :
Article dans une revue
Journal de Physique Lettres, 1975, 36 (11), pp.271-273. <10.1051/jphyslet:019750036011027100>


https://hal.archives-ouvertes.fr/jpa-00231206
Contributeur : Archives Journal de Physique <>
Soumis le : mercredi 1 janvier 1975 - 08:00:00
Dernière modification le : mardi 4 mars 2008 - 10:33:29
Document(s) archivé(s) le : lundi 3 mai 2010 - 18:10:55

Fichier

ajp-jphyslet_1975_36_11_271_0....
Accord explicite pour ce dépôt

Identifiants

Collections

IPNO | CSNSM | AJP

Citation

A.M. Lamoise, J. Chaumont, Frédéric Meunier, H. Bernas. Superconducting properties of aluminium thin films after ion implantation at liquid helium temperatures. Journal de Physique Lettres, 1975, 36 (11), pp.271-273. <10.1051/jphyslet:019750036011027100>. <jpa-00231206>

Exporter

Partager

Métriques

Consultations de
la notice

93

Téléchargements du document

122