HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

Ding-Kun Peng , Chun-Lin Wang , Guang-Yao Meng

Hydrogenated amorphous silicon(a-Si : H) films with high deposition rate up to 90Å/sec have been obtained by using microwave plasma chemical vapor deposition(CVD) from SiH4-H2 mixtures. The effect of deposition parameters, such as, power, pressure, flow rate, bias and deposition site, on the deposition rate and film properties has been examined. Films were characterized by conductivity, dark conductivity activation energy, optical band gap, and Infrared absorption. In the deposition rate range of 30-90 Å/sec, the deposited films exhibited photoconductive gains between 3.0x100 to 5.0x105. The deposition efficiency or silane use factor was found to be nearly 100%.

Domaines: Articles anciens

Ding-Kun Peng, Chun-Lin Wang, Guang-Yao Meng. HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS. Journal de Physique Colloques, 1989, 50 (C5), pp.C5-667-C5-672. ⟨10.1051/jphyscol:1989578⟩. ⟨jpa-00229611⟩