HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT

G. Przyrembel , R. Mahnkopf , H. Wagemann

The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated devices. After compensating all of the charge due to the irradiation the devices have a degradation behavior comparable to the non irradiated ones.

Domaines: Articles anciens

G. Przyrembel, R. Mahnkopf, H. Wagemann. HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-767-C4-770. ⟨10.1051/jphyscol:19884160⟩. ⟨jpa-00227901⟩